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参数资料
| 型号： | JANSH2N7269U |
| 英文描述： | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | 200伏1000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET的- 1封装 |
| 文件页数： | 6/12页 |
| 文件大小： | 440K |
| 代理商： | JANSH2N7269U |
www.irf.com
3
Pre-Irradiation
IRHF7130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100KRads(Si)
300 - 1000K Rads (Si)
U
UU
UUnits
nits
Test Conditions
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
100
V
VGS = 0V, ID = 1.0mA
V/5JD
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
25
25
A
VDS=80V, VGS =0V
RDS(on)
Static Drain-to-Source"
0.18
0.24
VGS = 12V, ID =5.0A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source"
0.18
0.24
VGS = 12V, ID =5.0A
On-State Resistance (TO-39)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHF7130, (JANSR2N7261)
2. Part number IRHF3130 (JANSF2N7261), IRHF4130 (JANSG2N7261), IRHF8130(, , JANSH2N7261)
Fig a.
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage"
1.5
1.5
V
VGS = 0V, IS = 8.0A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
Range
Energy
Range
Energy
Range
Energy
Range
Energy
Range
V
VV
V
VDS(V)
DS(V)
MeV/(mg/cm ))
(MeV)
(m)
@
V
VV
VVGS
GS
=0V @
V
VV
V
VGS
GS
=-5V@
V
VV
V
VGS
GS
=-10V@
V
VV
VVGS
GS
=-15V@
V
VV
VVGS
GS
=-20V
Cu
28
285
43
100
80
60
Br
36.8
305
39
100
90
70
50
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
VDS
Cu
Br
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