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参数资料
| 型号： | JANTXV2N3997 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|至111 |
| 文件页数： | 17/20页 |
| 文件大小： | 128K |
| 代理商： | JANTXV2N3997 |
MIL-PRF-19500/560E
6
Letter
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
0.098
0.102
2.49
2.59
C
0.098
0.102
2.49
2.59
NOTES:
1.
Dimensions are in inches.
2.
Metric equivalents are given for general information only.
3.
The physical characteristics of the die are:
Thickness: 0.006 inch (0.15 mm) to 0.010 inch (0.25 mm).
Top metal: Aluminum 25,000 minimum, 37,500 nominal.
Back metal: Gold 1,500 minimum, 6,500 nominal.
Back side: Collector.
4.
Unless otherwise specified, tolerance is
± 0.005 inch (0.13 mm).
FIGURE 3. Physical dimensions JANHCB and JANKCB.
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| JANTXV2N3998 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
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