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参数资料
| 型号： | JANTXV2N3997 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|至111 |
| 文件页数： | 9/20页 |
| 文件大小： | 128K |
| 代理商： | JANTXV2N3997 |
MIL-PRF-19500/560E
17
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: IC = 2 A, IB1 = 200 mA.
FIGURE 6. Saturated turn-on switching waveform and time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2. Sampling oscilloscope: Zin ≥ 1 M, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: CI = 2 A, IB1 = IB2 = 200 mA.
FIGURE 7. Saturated turn-off switching time waveform and test circuit.
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