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参数资料
| 型号： | JANTXV2N3997 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|至111 |
| 文件页数： | 5/20页 |
| 文件大小： | 128K |
| 代理商： | JANTXV2N3997 |
MIL-PRF-19500/560E
13
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
* Subgroup 1 2/
Visual and mechanical 3/
Examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
Resistance to solvents
3/, 4/, 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp Cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic Seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical
measurements 4/
Group A, subgroup 2
Bond strength 3/, 5/
2037
Precondition
TA = +250
°C at t = 24 hrs or
TA = +300
°C at t = 2 hrs
n = 11 wires, c = 0
Decap internal visual
(design verification)
2075
n = 4 device, c = 0
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
Breakdown voltage,
collector to emitter
3011
Bias condition D; IC = 50 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
100
V dc
Collector to emitter cutoff
current
3041
Bias condition D; VCE = 100 V dc
ICEO
100
A dc
Collector to emitter cutoff
current
3041
Bias condition A; VBE = 1.5 V dc; VCE
= 90 V dc
ICEX1
10
A dc
Collector to base cutoff
current
3036
Bias condition D; VCB = 100 V dc
ICBO
10
A dc
See footnote at end of table.
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