- 您现在的位置：买卖IC网 > PDF目录61501 > JDV2S14E 60.5 pF, SILICON, VARIABLE CAPACITANCE DIODE PDF资料下载
参数资料
| 型号： | JDV2S14E |
| 元件分类： | 变容二极管 |
| 英文描述： | 60.5 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | 1-1G1A, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 116K |
| 代理商： | JDV2S14E |
JDV2S14E
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S14E
Useful for VCO/TCXO
Small Package
High Capacitance Ratio: C1V/C2.5V = 2.15 (typ.)
Low Series Resistance : rs = 0.4 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 10 V
3
nA
C0.5V
VR = 0.5 V, f = 1 MHz
56.3
64.7
C1V
VR = 1 V, f = 1 MHz
44
49.5
C2.5V
VR = 2.5 V, f = 1 MHz
19
26.5
Capacitance
C4V
VR = 4 V, f = 1 MHz
9.2
12
pF
C0.5V/C1V
1.25
1.35
Capacitance ratio
C1V/C2.5V
1.99
2.15
2.3
Series resistance
rs
VR = 4 V, f = 100 MHz
0.4
0.8
Ω
Note: Signal level when capacitance is measured. Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
F H
相关PDF资料 |
PDF描述 |
|---|---|
| JDV2S16S | UHF BAND, 3.59 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S19S | UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S22FS | UHF BAND, 3.43 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S25FS | UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S25SC | UHF BAND, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JDV2S14ETPH3 | 制造商:Toshiba America Electronic Components 功能描述:VAR CAP SGL 10V 44PF 2PIN ESC - Tape and Reel |
| JDV2S16FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VCO for the UHF band |
| JDV2S17S | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VCO for UHF Band Radio |
| JDV2S19S | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Diode Silicon Epitaxial Planar Type |
| JDV2S22FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type |
发布紧急采购，3分钟左右您将得到回复。