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参数资料
| 型号： | JDV2S31SC |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 10.3 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | ULTRA SMALL, 1-1R1A, SC2, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 100K |
| 代理商： | JDV2S31SC |
JDV2S31SC
2007-12-10
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S31SC
VCO for UHF Band Radio
High capacitance ratio : C1V/C4V = 2.2 (typ.)
Low series resistance : rs = 0.23 (typ.)
A two-terminal ultra-small package supports high-density mounting
and the downsizing of end products.
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
9.88
10.72
Capacitance
C4V
VR = 4 V, f = 1 MHz
4.32
4.88
pF
Capacitance ratio
C1V/C4V
2.15
2.33
Series resistance
rs
VR = 1 V, f = 470 MHz
0.23
0.38
Ω
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
0.62±
0.03
0.19±
0.02
0.3±
0.03
0.32±0.03
0.38
0.19±
0.02
0.27±0.02
0.025±0.0
0.025±
0.015
１：カソード
２：アノード
１
２
1.Cathode
2.Anode
JEDEC
JEITA
TOSHIBA
1-1R1A
Weight: 0.00017 g (typ.)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
2
1
SC2
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