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参数资料
| 型号： | K4F160812C-FC50 |
| 元件分类： | DRAM |
| 英文描述： | 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 |
| 封装： | 0.300 INCH, PLASTIC, TSOP2-28 |
| 文件页数： | 14/20页 |
| 文件大小： | 226K |
| 代理商： | K4F160812C-FC50 |
K4F170811C, K4F160811C
CMOS DRAM
K4F170812C, K4F160812C
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS Address
50
mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70
°C)
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
VSS
0
V
Input High Voltage
VIH
2.0
-
VCC+0.3*1
2.4
-
VCC+1.0*1
V
Input Low Voltage
VIL
-0.3*2
-
0.8
-1.0*2
-
0.8
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤VIN≤VIN+0.3V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=2mA)
VOL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤VIN≤VIN+0.5V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-5mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=4.2mA)
VOL
-
0.4
V
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相关代理商/技术参数 |
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| K4F160812D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F170111C-BC60 | 制造商:Samsung Semiconductor 功能描述: |
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| K4F170411C-F | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
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