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参数资料
| 型号： | K4F160812C-FC50 |
| 元件分类： | DRAM |
| 英文描述： | 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 |
| 封装： | 0.300 INCH, PLASTIC, TSOP2-28 |
| 文件页数： | 17/20页 |
| 文件大小： | 226K |
| 代理商： | K4F160812C-FC50 |
K4F170811C, K4F160811C
CMOS DRAM
K4F170812C, K4F160812C
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-50
-60
Units
Note
Min
Max
Min
Max
Data set-up time
tDS
0
ns
9
Data hold time
tDH
10
ns
9
Refresh period (2K, Normal)
tREF
32
ms
Refresh period (4K, Normal)
tREF
64
ms
Refresh period (L-ver)
tREF
128
ms
Write command set-up time
tWCS
0
ns
7
CAS to W delay time
tCWD
36
40
ns
7
RAS to W delay time
tRWD
73
85
ns
7
Column address to W delay time
tAWD
48
55
ns
7
CAS precharge to W delay time
tCPWD
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
ns
CAS hold time (CAS -before-RAS refresh)
tCHR
10
ns
RAS to CAS precharge time
tRPC
5
ns
Access time from CAS precharge
tCPA
30
35
ns
3
Fast Page cycle time
tPC
35
40
ns
Fast Page read-modify-write cycle time
tPRWC
76
85
ns
CAS precharge time (Fast Page cycle)
tCP
10
ns
RAS pulse width (Fast Page cycle)
tRASP
50
200K
60
200K
ns
RAS hold time from CAS precharge
tRHCP
30
35
ns
OE access time
tOEA
13
15
ns
OE to data delay
tOED
13
15
ns
Output buffer turn off delay time from OE
tOEZ
0
13
0
15
ns
6
OE command hold time
tOEH
13
15
ns
Write command set-up time (Test mode in)
tWTS
10
ns
11
Write command hold time (Test mode in)
tWTH
10
ns
11
W to RAS precharge time(C-B-R refresh)
tWRP
10
ns
W to RAS hold time(C-B-R refresh)
tWRH
10
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
tRPS
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
tCHS
-50
ns
13,14,15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| K4F160812D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F170111C-BC60 | 制造商:Samsung Semiconductor 功能描述: |
| K4F170411C | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F170411C-B | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| K4F170411C-F | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
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