参数资料
型号: K4F160812C-FC50
元件分类: DRAM
英文描述: 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
封装: 0.300 INCH, PLASTIC, TSOP2-28
文件页数: 15/20页
文件大小: 226K
代理商: K4F160812C-FC50
K4F170811C, K4F160811C
CMOS DRAM
K4F170812C, K4F160812C
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and CAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,
DQ=Don
′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver),
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=CAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ7=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4F170812C
K4F160812C
K4F170811C
K4F160811C
ICC1
Don
′t care
-50
-60
90
80
110
100
90
80
110
100
mA
ICC2
Normal
L
Don
′t care
1
2
1
2
1
mA
ICC3
Don
′t care
-50
-60
90
80
110
100
90
80
110
100
mA
ICC4
Don
′t care
-50
-60
80
70
90
80
70
90
80
mA
ICC5
Normal
L
Don
′t care
0.5
200
0.5
200
1
250
1
250
mA
uA
ICC6
Don
′t care
-50
-60
90
80
110
100
90
80
110
100
mA
ICC7
L
Don
′t care
250
300
uA
ICCS
L
Don
′t care
200
250
uA
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