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参数资料
| 型号： | KIT33880DWBEVB |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/25页 |
| 文件大小： | 0K |
| 描述： | KIT EVAL FOR MC33880 8X SW W/SPI |
| 标准包装： | 1 |
| 主要目的： | 电源管理，高端和低端驱动器（内部 FET） |
| 嵌入式： | 否 |
| 已用 IC / 零件： | MC33880 |
| 主要属性： | 8 个可配置高/低 FET，5.5 ~ 24.5V，0.8 ~ 2A，0.55 欧 |
| 次要属性： | SPI 接口，反向电池，温度，短路，电流限制保护 |
| 已供物品： | 板，软件 |
| 产品目录页面： | 808 (CN2011-ZH PDF) |
| 相关产品： | MC33880DWBR2CT-ND - IC SERIAL SWITCH OCT WSPI 32SOIC MC33880DWR2-ND - IC SERIAL SWITCH OCT WSPI 28SOIC MC33880DWBR2TR-ND - IC SERIAL SWITCH OCT WSPI 32SOIC MC33880DW-ND - IC SERIAL SWITCH OCT WSPI 28SOIC MC33880DWB-ND - IC SWITCH 8X WITH SPI 32-SOIC |
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.75 V ≤ V DD ≤ 5.25 V, 9.0 V ≤ V PWR ≤ 16 V, -40 ° C ≤ T C ≤ 125 ° C unless otherwise
noted. Typical values, where applicable, reflect the parameter’s approximate average value with V PWR = 13 V, T A = 25 ° C.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING
Output Slew Rate Low-Side Configuration (14)
t R
V/ μ s
R L = 620 Ω
Output Slew Rate Low-Side Configuration (14)
R L = 620 Ω
Output Slew Rate High-Side Configuration (14)
R L = 620 Ω
t F
t R
0.1
0.1
0.1
0.5
0.5
0.3
1.2
1.2
1.2
V/ μ s
V/ μ s
Output Slew Rate High-Side Configuration
t F
V/ μ s
R L = 620 Ω
0.1
0.3
1.2
Output Turn ON Delay Time, High-Side and Low-Side Configuration (15)
t DLY(ON)
1.0
15
50
μ s
Output Turn OFF Delay Time, High-Side and Low-Side Configuration
t DLY(OFF)
1.0
30
100
μ s
Output Fault Delay Time
t FAULT
100
–
300
μ s
DIGITAL INTERFACE TIMING
Recommended Frequency of SPI Operation
Required Low State Duration on V DD for Reset
V DD ≤ 0.2 V
–
t RESET
–
–
4.0
4.0
6.0
10
MHz
μ s
Falling Edge of CS to Rising Edge of SCLK (Required Setup Time)
Falling Edge of SCLK to Rising Edge of CS (Required Setup Time)
DI to Falling Edge of SCLK (Required Setup Time)
Falling Edge of SCLK to DI (Required Hold Time)
t LEAD
t LAG
t DI(su)
t DI(HOLD)
100
50
16
20
–
–
–
–
–
–
–
–
ns
ns
ns
ns
DI, CS, SCLK Signal Rise Time
t R(DI)
–
5.0
–
ns
DI, CS, SCLK Signal Fall Time
t F(DI)
–
5.0
–
ns
Time from Falling Edge of CS to DO Low Impedance
t DO(EN)
–
–
60
ns
Time from Rising Edge of CS to DO High Impedance (20)
Time from Rising Edge of SCLK to DO Data Valid (21)
t DO(DIS)
t VALID
–
–
–
25
60
60
ns
ns
Notes
14.
15.
16.
17.
18.
19.
20.
21.
Output Rise and Fall time respectively measured across a 620 Ω resistive load at 10 to 90 percent and 90 to 10 percent voltage points.
Output turn ON and OFF delay time measured from 50 percent rising edge of CS to 90 and 10 percent of initial voltage.
Duration of fault before fault bit is set. Duration between access times must be greater than 300 μ s to read faults.
This parameter is guaranteed by design but is not production tested.
Rise and Fall time of incoming DI, CS , and SCLK signals suggested for design consideration to prevent the occurrence of double pulsing.
Time required for output status data to be available for use at DO pin.
Time required for output status data to be terminated at DO pin
Time required to obtain valid data out from DO following the rise of SCLK.
33880
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
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