参数资料
型号: KMI15/4T/R
厂商: NXP SEMICONDUCTORS
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, PSIP2
封装: PLASTIC, SOT-453C, MULTI CHIP PACKAGE-2
文件页数: 10/16页
文件大小: 115K
代理商: KMI15/4T/R
2000 Sep 05
3
Philips Semiconductors
Product specication
Rotational speed sensor
KMI15/4
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tamb =25 °C; VCC = 12 V; d = 1.5 mm; ft = 2 kHz; test circuit: see Fig.7; RL = 115 ; sensor positioning: see Fig.15;
gear wheel: module 2 mm; material 1.0715; unless otherwise specied.
Note
1. High rotational speeds of wheels reduce the sensing distance due to eddy current effects (see Fig.17).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC supply voltage
Tamb = 40 to +85 °C; RL = 115 0.5
+16
V
Tstg
storage temperature
40
+150
°C
Tamb
operating ambient temperature
40
+85
°C
Tsld
soldering temperature
t
≤ 10 s
260
°C
output short-circuit duration to GND
continuous
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICC (low)
current output signal low
see Figs 6 and 8
5.6
7
8.4
mA
ICC (high)
current output signal high
see Figs 6 and 8
11.2
14
16.8
mA
tr
output signal rise time
CL = 100 pF; see Fig.9;
10 to 90% value
0.5
s
tf
output signal fall time
CL = 100 pF; see Fig.9;
10 to 90% value
0.7
s
td
switching delay time
between stimulation pulse (generated by
a coil) and output signal
1
s
ft
operating tooth frequency for both rotation directions
0
25000
Hz
d
sensing distance
see Fig.15 and note 1
0 to 2.0 0 to 2.3
mm
δ
duty cycle
see Fig.6
20
50
80
%
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