参数资料
型号: KMI15/4T/R
厂商: NXP SEMICONDUCTORS
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, PSIP2
封装: PLASTIC, SOT-453C, MULTI CHIP PACKAGE-2
文件页数: 11/16页
文件大小: 115K
代理商: KMI15/4T/R
2000 Sep 05
4
Philips Semiconductors
Product specication
Rotational speed sensor
KMI15/4
FUNCTIONAL DESCRIPTION
The KMI15/4 sensor is sensitive to the motion of ferrous
gear wheels or reference marks. The functional principle is
shown in Fig.3. Due to the effect of flux bending, the
different directions of magnetic field lines in the
magnetoresistive sensor element will cause an electrical
signal. Because of the chosen sensor orientation and the
direction of ferrite magnetization, the KMI15/4 is sensitive
to movement in the ‘y’ direction in front of the sensor only
(see Fig.2).
The magnetoresistive sensor element signal is amplified,
temperature compensated and passed to a Schmitt-trigger
in the conditioning integrated circuit (Figs 4 and 5).
The digital output signal level (see Fig.6) is at a fixed level
independent of the sensing distance. A (2-wire) output
current enables safe sensor signal transport to the
detecting circuit (see Fig.7). The integrated circuit housing
is separated from the sensor element housing to optimize
the sensor behaviour at high temperatures.
The strength of the magnetic field caused by the
Ferroxdure 100 magnet in the different sensor directions,
measured at the centre of the magnetoresistive bridge, is
typically: Hx = 7 kA/m (auxiliary field) and Hz = 17 kA/m
(perpendicular to the sensor surface). Hy is zero due to the
trimming process.
Fig.2 Component detail of the KMI15/4.
handbook, halfpage
y
z
xx
IC
sensor
magnet with
direction of
magnetization
MBH779
Fig.3 Functional principle.
handbook, full pagewidth
gear wheel
magnet
magnetic
field lines
(a)
(b)
(c)
direction
of
motion
(d)
MRA957
sensor
y
z
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