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参数资料
| 型号： | L6382D |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20 |
| 封装： | ROHS COMPLIANT, SOP-20 |
| 文件页数： | 1/22页 |
| 文件大小： | 301K |
| 代理商： | L6382D |
March 2007
Rev 6
1/22
22
L6382D
Power management unit
for microcontrolled ballast
Features
■ Integrated high-voltage start-up
■ 4 drivers for PFC, half-bridge & pre-heating
MOSFETs
■ 3.3V microcontroller compatible
■ Fully integrate power management for all
operating modes
■ Internal two point VCC regulator
■ Over-current protection with digital output
signal
■ Cross-conduction protection (interlocking)
■ Under voltage lock-out
■ Integrated bootstrap diode
Applications
■ Dimmable / non-dimmable ballast
Description
The L6382D is suitable for microcontrolled
electronic ballasts embedding a PFC stage and a
half-bridge stage. The L6382D includes 4
MOSFET driving stages (for the PFC, for the half
bridge, for the preheating MOSFET) plus a power
management unit (PMU) featuring also a
reference able to supply the microcontroller in any
condition.
Besides increasing the application efficiency, the
L6382D reduces the bill of materials because
different tasks (regarding drivers and power
management) are performed by a single IC, which
improves the application reliability.
SO-20
Figure 1.
Block diagram
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6382D_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power management unit for microcontrolled ballast |
| L6382D5 | 功能描述:功率因数校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel |
| L6382D5TR | 功能描述:功率因数校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel |
| L6382DTR | 功能描述:电池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| L6384 | 功能描述:功率驱动器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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