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参数资料
| 型号： | L6382D |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20 |
| 封装： | ROHS COMPLIANT, SOP-20 |
| 文件页数： | 17/22页 |
| 文件大小： | 301K |
| 代理商： | L6382D |
Pin settings
L6382D
4/22
2
Pin settings
2.1
Pin connection
Figure 3.
Pin connection (top view)
2.2
Pin description
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
PFI
LSI
HSI
HEI
PFG
N.C.
TPR
GND
LSG
VCC
VREF
CSI
CSO
HEG
N.C.
HVSU
N.C.
OUT
HSG
BOOT
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
PFI
LSI
HSI
HEI
PFG
N.C.
TPR
GND
LSG
VCC
VREF
CSI
CSO
HEG
N.C.
HVSU
N.C.
OUT
HSG
BOOT
Table 1. Pin description
Name
Pin N°
Description
1PFI
Digital input signal to control the PFC gate driver. This pin has to be connected
to a TTL compatible signal.
2LSI
Digital input signal to control the half-bridge low side driver. This pin has to be
connected to a TTL compatible signal.
3HSI
Digital input signal to control the half-bridge high side driver. This pin has to be
connected to a TTL compatible signal.
4HEI
Digital input signal to control the HEG output. This pin has to be connected to a
TTL compatible signal.
5PFG
PFC Driver Output. This pin is intended to be connected to the PFC power
MOSFET gate. A resistor connected between this pin and the power MOS gate
can be used to reduce the peak current. An internal 10K
resistor toward
ground avoids spurious and undesired MOSFET turn-on. The totem pole
output stage is able to drive the power MOS with a peak current of 120mA
source and 250mA sink.
6
N.C.
Not connected
7TPR
Input for two point regulator; by coupling the pin with a capacitor to a switching
circuit, it is possible to implement a charge circuit for the Vcc.
8GND
Chip ground. Current return for both the low-side gate-drive currents and the
bias current of the IC. All of the ground connections of the bias components
should be tied to a trace going to this pin and kept separate from any pulsed
current return.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6382D_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power management unit for microcontrolled ballast |
| L6382D5 | 功能描述:功率因数校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel |
| L6382D5TR | 功能描述:功率因数校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel |
| L6382DTR | 功能描述:电池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| L6384 | 功能描述:功率驱动器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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