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参数资料
| 型号： | L6382D |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20 |
| 封装： | ROHS COMPLIANT, SOP-20 |
| 文件页数： | 9/22页 |
| 文件大小： | 301K |
| 代理商： | L6382D |
L6382D
Block description
17/22
7.3
Drivers
●
LSD (Low Side Driver): it consists of a level shifter from 3.3V logic signal (LSI) to Vcc
MOS driving level; conceived for the half-bridge low-side power MOS, it is able to
source and sink 120mA (min).
●
HSD (Level Shifter and High Side Driver): it consists of a level shifter from 3.3V logic
signal (HGI) to the high side gate driver input up to 600V. Conceived for the half-bridge
high-side power MOS, the HSG is able to source and sink 120mA.
●
PFD (Power Factor Driver): it consists of a level shifter from 3.3V logic signal (PFI) to
Vcc MOS driving level: the driver is able to source 120mA from Vcc to PFG (turn-on)
and to sink 250mA to GND (turn-off); it is suitable to drive the MOS of the PFC pre-
regulator stage.
●
HED (Heat Driver): it consists of a level shifter from 3.3V logic signal (HEI) to Vcc MOS
driving level; the driver is able to source 30mA from Vcc to HEG and to sink 75mA to
GND and it is suitable for the filament heating when they are supplied by independent
winding.
●
Bootstrap Circuit: it generates the supply voltage for the high side Driver (HSD).
A patented integrated bootstrap section replaces an external bootstrap diode. This
section together with a bootstrap capacitor provides the bootstrap voltage to drive the
high side power MOSFET. This function is achieved using a high voltage DMOS driver
which is driven synchronously with the low side external power MOSFET. For a safe
operation, current flow between BOOT pin and Vcc is always inhibited, even though
ZVS operation may not be ensured.
7.4
Internal logic, over current protection (OCP) and interlocking
function
The DIM (Digital Input Monitor) block manages the input signals delivered to the drivers
ensuring that they are low during the described start-up procedure; the DIM block controls
the L6382D behaviour during both save and operating modes.
When the voltage on pin CSI overcomes the internal reference of 0.5V (typ.) the block
latches the fault condition: in this state the OCP block forces low both HSG and LSG signals
while CSO will be forced high. This condition remains latched until LSI and HSI are
simultaneously low and CSI is below 0.5V.
This function is suitable to implement an over current protection or hard-switching detection
by using an external sense resistor.
As the voltage on pin CSI can go negative, the current must be limited below 2mA by
external components.
Another feature of the DIM block is the internal interlocking that avoids cross-conduction in
the half-bridge FET's: if by chance both HGI and LGI input's are brought high at the same
time, then LSG and HSG are forced low as long as this critical condition persists.
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相关代理商/技术参数 |
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| L6382D_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power management unit for microcontrolled ballast |
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| L6382D5TR | 功能描述:功率因数校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 开关频率:300 KHz 最大功率耗散: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel |
| L6382DTR | 功能描述:电池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| L6384 | 功能描述:功率驱动器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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