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参数资料
| 型号： | L6615N |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDIP8 |
| 封装： | MINI, DIP-8 |
| 文件页数： | 15/20页 |
| 文件大小： | 394K |
| 代理商： | L6615N |
L6615
4/20
ELECTRICAL CHARACTERISTCS
(Tj = -40 to 85°C, Vcc=12V, VADJ = 12V, CCOMP = 5nF to GND, RCGA = 16k, unless otherwise specified;
VSENSE = IL * RSENSE, RG1 = RG2 = 200)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Vcc
Vcc
Operating range
2.7
22
V
Icc
Quiescent current
VSH= 1V, VSENSE= 0V
5
6
mA
VCC, ON
Turn-on voltage
VSH= 0.2V, VSENSE= 0V
2.45
2.60
2.75
V
VCC,OFF
Turn-off voltage
2.35
2.5
2.65
V
VH
Hysteresis
100
mV
Vz
ICC = 20mA
24
26
V
CURRENT SENSE AMPLIFIER
VOS
Input offset voltage
0.1V
≤ VSH ≤ 10.0V
-1.5
0.0
1.5
mV
VCGA
Out high voltage
VSENSE = 0.25V
Vcc-2.2
V
ICGAS
Short circuit current
VCGA= 0V, VSENSE= 0.45V
-1.5
-2.0
mA
IB(CS-)
Input bias current (high side
sensing)
VSENSE = 0V, VCS+=+12V
1.0
A
IB(CS+)
Input bias current (low side
sensing)
VSENSE = 0V, VCS+=0V
-1.0
A
CMR
Common mode dynamics range
VCS-, VCS+
0VCC
V
VTHCS+
Switchover threshold low side to
high side sensing
VCS+
1.6
V
SWH
Switchover hysteresis
0.16
V
SHARE DRIVE AMPLIFIER
HVSH
SH high output voltage
VSENSE= 250mV, ISH= -1mA
Vcc-2.2
V
LVSH
SH low output voltage
VCGA= 0mV, RSH= 200
45
mV
α(+)
High side sensing mirror accuracy
(*)
±1
±5
%
α(-)
Low side sensing mirror accuracy
(*)
±1
±5
%
VSH, load Load regulation
-1.0mA
≤ ISDA(OUT) ≤ -4mA
20
mV
ISC
Short circuit current
VSH= 0V, VSENSE= 25mV
-20
-13.5
-8
mA
SR
Slew rate
VSENSE= -10mV to 90mV step,
RSH= 200 to GND
0.8
1.5
2.2
V/
s
VSENSE= 90mV to –10mV step,
RSH= 200 to GND
234
V/
s
SHARE SENSE AMPLIFIER
Ri
Input impedance
22.4
32
41.6
k
ERROR AMPLIFIER
Gm
Transconductance
3
4
5
mS
Vos
Input offset voltage
VCGA=1V
30
50
70
mV
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