参数资料
型号: L6997STR
厂商: STMICROELECTRONICS
元件分类: 稳压器
英文描述: SWITCHING CONTROLLER, PDSO20
封装: MO-153-AC, TSSOP-20
文件页数: 18/30页
文件大小: 546K
代理商: L6997STR
25/30
L6997S
Figure 25. Efficiency Vs Output Current
Figure 26. Efficiency Vs Output Current
50
55
60
65
70
75
80
85
90
95
100
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Output Current [A]
E
ff
[%]
VOUT = 12V
VIN = 25V
VCC = 5V
FSW = 200KHz
VOUT = 5V
VOUT = 3.3V
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Output Current [A]
E
ff
[%
]
VOUT = 12V
VIN = 33V
7.5 DDR MEMORY AND TERMINATION SUPPLY
Double data rate (DDR) memories require a particular Power Management Architecture. This is due to fact that
the trace between the driving chipset and the memory input must be terminated with resistors. Since the Chipset
driving the Memory has a push pull output buffer, the Termination voltage must be capable of sourcing and sink-
ing current. Moreover, the Termination voltage must be equal to one half of the memory supply (the input of the
memory is a differential stage requiring a reference bias midpoint) and in tracking with it. For DDRI the Memory
Supply is 2.5V and the Termination voltage is 1.25Vwhile for the DDRII the Memory Supply is 1.8V and the Ter-
mination voltage is 0.9V. Figure 27 shows a complete DDRII Memory and Termination Supply realized by using
2 x L6997S. The 1.8V section is powering the memory, while the 0.9V section is providing the termination voltage.
Figure 27. Application Idea: DDRII Memory Supply
L6997
PGND
PHASE
GNDSENSE
VSENSE
LGATE
BOOT
HGATE
VCCDR
FB
OSC
VCC
VREF
NOSKIP
OVP
PGOOD
SHDN
VCC
L6997
GND
SS
ILIM
U2
GNDSENSE
VSENSE
FB
PGND
LGATE
PHASE
HGATE
BOOT
VCCDR
VCC
OSC
NOSKIP
INT
VREF
SHDN
PGOOD OVP GND
U1
SS
ILIM
VIN
VCC
INT
+
-
CHIPSET
MEMORY
SUPPLY
VR
E
F
BUS
TERMINATION
NETWORK
Vddq
1.8V@15A
Vtt
0.9V@- 5A
+
R
2R
R
STS8DNF3LL
STS11NF3LL
L6997S
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