参数资料
型号: L9A0212
厂商: LSI CORP
元件分类: 微控制器/微处理器
英文描述: Microprocessor
中文描述: 32-BIT, 85 MHz, RISC PROCESSOR, PBGA256
封装: PLASTIC, MO-151, BGA-256
文件页数: 24/32页
文件大小: 128K
代理商: L9A0212
24
TinyRISC LR4102 Microprocessor
Table 16
Recommended Operating Conditions
Symbol
Parameter
Limits
Unit
V
DD/DD2
DC Supply Voltage
1
at V
DD
/V
DD2
nominal 1.8 V
at V
DD
/V
DD2
nominal 2.5 V
1. Referenced to V
SS
.
1.71 to 1.89
2.38 to 2.63
V
V
T
A
Ambient Temperature
0 to 70
C
Table 17
Capacitance
Symbol
Parameter
Min
Typ
Max
Unit
C
IN
Input Capacitance
4.6
5.2
pF
C
OUT
Output Capacitance
4.6
5.2
pF
Table 18
DC Characteristics
Symbol
Parameter
Condition
1
1. Specified at V
DD4
equals 3.3 V
±
5% at ambient temperature over the specified range.
Min
Typ
Max
Units
V
DD4
Supply Voltage, I/O
3.0
3.3
3.6
V
V
IL
Voltage Input Low
0.5
0.8
V
V
IH
Voltage Input High
2.0
V
DD4
+ 0.3
V
I
IL
Current Input Leakage
Inputs with no Pull-up/-down Resistor
Inputs with Pull-down Resistor
Inputs with Pull-up Resistor
V
IN
= V
SS
/V
DD4
V
IN
= V
DD4
V
IN
= V
SS
10
35
35
±
1
115
115
10
222
214
μ
A
μ
A
μ
A
V
OL
Voltage Output Low
0.2
0.4
V
V
OH
Voltage Output High
2.4
V
DD4
V
I
DD
Quiescent Supply Current
<1
20
100
μ
A
I
CC
Dynamic Supply Current
170
mA
I
OZ
Z-state Output Leakage Current
V
OH
= V
SS
/V
DD4
10
±
1
10
μ
A
相关PDF资料
PDF描述
LAA110 Dual Pole OptoMOS Relays
LAA110P Dual Pole OptoMOS Relays
LAA110PTR Dual Pole OptoMOS Relays
LAA110S Dual Pole OptoMOS Relays
LAA110STR Dual Pole OptoMOS Relays
相关代理商/技术参数
参数描述
L9D112G80BG4 制造商:LOGIC 制造商全称:LOGIC 功能描述:1.2 Gb, DDR - SDRAM Integrated Module
L9D112G80BG4E10 制造商:LOGIC 制造商全称:LOGIC 功能描述:1.2 Gb, DDR - SDRAM Integrated Module
L9D112G80BG4E6 制造商:LOGIC 制造商全称:LOGIC 功能描述:1.2 Gb, DDR - SDRAM Integrated Module
L9D112G80BG4E75 制造商:LOGIC 制造商全称:LOGIC 功能描述:1.2 Gb, DDR - SDRAM Integrated Module
L9D112G80BG4E8 制造商:LOGIC 制造商全称:LOGIC 功能描述:1.2 Gb, DDR - SDRAM Integrated Module