参数资料
型号: LC72122V
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: PLL合成/DDS/VCOs
英文描述: PLL FREQUENCY SYNTHESIZER, 40 MHz, PDSO20
封装: SSOP-20
文件页数: 16/22页
文件大小: 346K
代理商: LC72122V
No. 6113-3/22
LC72122V
Electrical Characteristics within the allowable operating ranges
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Rf1
XIN
8.0
M
Internal feedback resistors
Rf2
FMIN
500
k
Rf3
AMIN
500
k
Rf4
IFIN
500
k
Internal pull-down resistors
Rpd1
FMIN
200
k
Rpd2
AMIN
200
k
Internal output resistor
Rd
XOUT
250
k
Hysteresis
VHIS
CE, CL, DI, IO1, IO2
0.1 VDD
V
VOH1
PD: IO = –1 mA
VDD – 0.5
V
Output high-level voltage
VOH2
AIN (PDS) : IO = – 2 mA (VDD = 1.8 to 2.7 V)
VDD – 0.5
V
AIN (PDS) : IO = – 4 mA (VDD = 2.7 to 3.6 V)
VDD – 0.5
V
VOL1
PD: IO = 1 mA
0.5
V
VOL2
AIN (PDS) : IO = 2 mA (VDD = 1.8 to 2.7 V)
0.5
V
AIN (PDS) : IO = 4 mA (VDD = 2.7 to 3.6 V)
0.5
V
BO1 to BO3, IO1, IO2; IO = 1 mA
0.2
V
Output low-level voltage
VOL3
BO1 to BO3, IO1, IO2; IO = 5 mA
1.0
V
BO1 to BO3, IO1, IO2; IO = 8 mA
1.6
V
VOL4
DO: IO = 1 mA
0.2
V
DO: IO = 5 mA
1.0
V
VOL5
AOUT, IO = 5 mA, AIN = 1.2 V
1.5
V
IIH1
CE, CL, DI: VI = 6.5 V
5.0
A
IIH2
IO1, IO2: VI = 7 V
5.0
A
Input high-level current
IIH3
XIN: VI = VDD
0.11
0.45
1.3
A
IIH4
FMIN, AMIN: VI = VDD
1.8
7.2
22
A
IIH5
IFIN: VI = VDD
1.8
7.2
22
A
IIH6
AIN: VI = VDD
200
nA
IIL1
CE, CL, DI: VI = 0 V
5.0
A
IIL2
IO1, IO2: VI = 0 V
5.0
A
Input low-level current
IIL3
XIN: VI = 0 V
0.11
0.45
1.3
A
IIL4
FMIN, AMIN: VI = 0 V
1.8
7.2
22
A
IIL5
IFIN: VI = 0 V
1.8
7.2
22
A
IIL6
AIN: VI = 0 V
200
nA
IOFF1
BO1 to BO3, AOUT: VO = 13 V
5.0
A
Output off leakage current
IOFF2
IO1, IO2: VO = 7 V
5.0
A
IOFF3
DO: VO = 6.5 V
5.0
A
High-level three-state off
IOFFH
PD: VO = VDD
0.01
200
nA
leakage current
Low-level three-state off
IOFFL
PD: VO = 0 V
0.01
200
nA
leakage current
Input capacitance
CIN
FMIN
6pF
IDD1VDD: Xtal = 75 kHz, fIN2 = 250 MHz, VIN2 = 40 mVrms
4
10
mA
Supply current
IDD2
VDD: PLL block stopped (PLL inhibit),
10
A
Xtal oscillator operating (Xtal = 75 kHz)
IDD3VDD: PLL block stopped, Xtal oscillator stopped
10
A
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