参数资料
型号: LM25066PSQX
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: 电源管理
英文描述: POWER SUPPLY SUPPORT CKT, QCC24
封装: LLP-24
文件页数: 4/48页
文件大小: 1456K
代理商: LM25066PSQX
Block Diagram
30115810
Functional Description
The inline protection functionality of the LM25066 is designed
to control the in-rush current to the load upon insertion of a
circuit card into a live backplane or other “hot” power source,
thereby limiting the voltage sag on the backplane’s supply
voltage and the dV/dt of the voltage applied to the load. Ef-
fects on other circuits in the system are minimized, preventing
possible unintended resets. A controlled shutdown when the
circuit card is removed can also be implemented using the
LM25066.
In addition to a programmable current limit, the LM25066
monitors and limits the maximum power dissipation in the se-
ries pass device to maintain operation within the device Safe
Operating Area (SOA). Either current limiting or power limiting
for an extended period of time results in the shutdown of the
series pass device. In this event, the LM25066 can latch off
or repetitively retry based on the hardware setting of the
RETRY pin. Once started, the number of retries can be set to
none, 1, 2, 4, 8, 16, or infinite. The circuit breaker function
quickly switches off the series pass device upon detection of
a severe over-current condition. Programmable under-volt-
age lockout (UVLO) and over-voltage lockout (OVLO) circuits
shut down the LM25066 when the system input voltage is
outside the desired operating range.
The telemetry capability of the LM25066 provides intelligent
monitoring of the input voltage, output voltage, input current,
input power, temperature, and an auxiliary input. The
LM25066 also provides a peak capture of the input power and
programmable hardware averaging of the input voltage, cur-
rent, power, and output voltage. Warning thresholds which
trigger the SMBA pin may be programmed for input and output
voltage, current, power and temperature via the PMBus in-
terface. Additionally, the LM25066 is capable of detecting
damage to the external MOSFET, Q
1.
www.national.com
12
LM25066
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