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| 型号： | LN162S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 红外LED |
| 英文描述： | GaAs Infrared Light Emitting Diode |
| 中文描述： | 3 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| 封装： | CERAMIC, CTRLR102-001, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 298K |
| 代理商： | LN162S |
SHC00002CED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008
1
Infrared Light Emitting Diodes
LN162S
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efciency: PO = 3.5 mW (typ.)
Infrared light emission close to monochromatic light: λP = 950 nm (typ.)
Small ceramic package
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD
75
mW
Forward current
IF
50
mA
Pulse forward current *
IFP
1.0
A
Reverse voltage
VR
3
V
Operating ambient temperature
Topr
–25 to +85
°
C
Storage temperature
Tstg
–30 to +100
°
C
Note) *: f = 100 Hz, Duty cycle = 0.1%
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Radiant power *
PO
IF = 50 mA
1.5
3.5
mW
Reverse current
IR
VR = 3 V
10
A
Forward voltage
VF
IF = 50 mA
1.2
1.5
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
50
pF
Peak emission wavelength
λP
IF = 50 mA
950
nm
Spectral half band width
Δλ
IF = 50 mA
50
nm
Half-power angle
θ
The angle when the radiant power is halved.
80
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: A light detection element uses a silicon diode have proofread a load with a standard device.
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