- 您现在的位置：买卖IC网 > PDF目录296315 > LN175 (PANASONIC CORP) GaAlAs Infrared Light Emitting Diode PDF资料下载
参数资料
| 型号： | LN175 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 红外LED |
| 英文描述： | GaAlAs Infrared Light Emitting Diode |
| 中文描述： | 3.5 mm, 1 ELEMENT, INFRARED LED, 900 nm |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 342K |
| 代理商： | LN175 |
SHC00004DED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009
1
Infrared Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efciency: PO = 12 mW (typ.)
Emitted light spectrum suited for silicon photodetectors: λP = 900 nm (typ.)
Good radiant power output linearity with respect to input current
Wide directivity: θ = 120° (typ.)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD
170
mW
Forward current
IF
100
mA
Pulse forward current *
IFP
2
A
Reverse voltage
VR
3
V
Operating ambient temperature
Topr
–25 to +85
°
C
Storage temperature
Tstg
–40 to +100
°
C
Note) *: f = 100 Hz, Duty cycle = 0.1%
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Radiant power *
PO
IF = 100 mA
7.0
12.0
mW
Reverse current
IR
VR = 3 V
10
A
Forward voltage
VF
IF = 100 mA
1.4
1.7
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
50
pF
Peak emission wavelength
λP
IF = 100 mA
900
nm
Spectral half band width
Δλ
IF = 100 mA
70
nm
Rise time
tr
IFP = 100 mA
700
ns
Fall time
tf
IFP = 100 mA
700
ns
Half-power angle
θ
The angle when the radiant power is halved.
120
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 0.55 MHz
fC : 10 × log
PO at f = fC
= –3
PO at f = 1 MHz
3. *: A light detection element uses a silicon diode have proofread a load with a standard device.
相关PDF资料 |
PDF描述 |
|---|---|
| LN184 | GaAlAs Infrared Light Emitting Diode |
| LN1851C | LED Surface Mounting Chip Led |
| LN1851C-TR | LED Surface Mounting Chip Led |
| LNG209WBR | Phi-4.0 mm Series |
| LNJ107W5PRW | Photovoltaic MOSFET Driver (4-pin SOP T&R) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LN175F100 | 制造商:Ohmite Mfg Co 功能描述: |
| LN175F200 | 制造商:Ohmite Mfg Co 功能描述: |
| LN175F25R | 制造商:Ohmite Mfg Co 功能描述: |
| LN175F50R | 制造商:Ohmite Mfg Co 功能描述:Res Wirewound 50 Ohm 5% 175W ±260ppm/°C Ceramic Silicon RDL Lug Bolt-On |
| LN175F5R0 | 制造商:Ohmite Mfg Co 功能描述: |
发布紧急采购，3分钟左右您将得到回复。