参数资料
型号: LN175
厂商: PANASONIC CORP
元件分类: 红外LED
英文描述: GaAlAs Infrared Light Emitting Diode
中文描述: 3.5 mm, 1 ELEMENT, INFRARED LED, 900 nm
封装: ROHS COMPLIANT PACKAGE-2
文件页数: 2/4页
文件大小: 342K
代理商: LN175
SHC00004DED
This product complies with the RoHS Directive (EU 2002/95/EC).
LN175
2
Ambient temperature Ta (°C)
Forward
current
I F
(mA)
120
100
80
60
40
20
0
20
40
60
80
100
25
103
102
10
1
Pulse forward current IFP (A)
Relative
radiant
power
P
O
1
10
10 1
10 2
10 1
10 3
10 2
1.6
1.2
0.8
0.4
0
Ambient temperature Ta (°C)
Forward
voltage
V
F
(V
)
40
0
40
80
120
IF = 100 mA
10 mA
1 mA
IF = 100 mA
80
Duty cycle (%)
Pulse
forward
current
I FP
(A
)
102
10
1
101
10
102
1
10 2
10 1
10
1
Forward voltage VF (V)
Pulse
forward
current
I FP
(A
)
1
3
5
2
4
10 2
10 1
0
(1)
(2)
(1) tW = 10 s
f = 100 Hz
(2) DC
Ta = 25°C
10
1
Ambient temperature Ta (°C)
Relative
radiant
power
P
O
40
0
40
80
10 1
960
940
920
900
880
860
Ambient temperature Ta (°C)
Peak
emission
wavelength
λ P
(nm
)
40
0
40
80
120
100
80
60
40
20
Wavelength λ (nm)
Relative
luminous
intensity
(%)
820
860
900
940
980 1 020
0
780
IF = 100 mA
Ta = 25°C
100
150
50
Relative
luminous
intensity
(%
)
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
tW = 10 s
Ta = 25°C
tW = 10 s
f = 100 Hz
Ta = 25°C
λP Ta
Relative luminous intensity λ
Directive characteristics
IF Ta
IFP Duty cycle
IFP VF
PO IFP
VF Ta
PO Ta
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