参数资料
型号: LT1016IS8#PBF
厂商: Linear Technology
文件页数: 7/20页
文件大小: 0K
描述: IC COMPARATOR 10NS HI-SPD 8-SOIC
标准包装: 100
系列: UltraFast™
类型: 带锁销
元件数: 1
输出类型: CMOS,补充型,TTL
电压 - 输入偏移(最小值): 3mV @ ±5V
电流 - 输入偏压(最小值): 10µA @ ±5V
电流 - 输出(标准): 20mA
电流 - 静态(最大值): 35mA
CMRR, PSRR(标准): 96dB CMRR,75dB PSRR
传输延迟(最大): 14ns
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
安装类型: 表面贴装
包装: 管件
LT1016
15
1016fc
Typical applicaTions
1MHz to 10MHz Crystal
Oscillator
18ns Fuse with Voltage Programmable Trip Point
+
LT1016
0.068F
2k
GND
LATCH
V
1MHz TO 10MHz
CRYSTAL
2k
5V
V+
Q
1016 AI04
OUTPUT
+
A2
LT1016
+
A1
LT1193
RESET (NORMALLY OPEN)
900
200
CALIBRATE
FB
1k*
9k*
LOAD
10
CARBON
TRIP SET
0mA TO 250mA = 0V TO 2.5V
28V
Q1
2N3866
Q2
2N2369
330
2.4k
–5V
33pF
300
1k
* = 1% FILM RESISTOR
A1 AND A2 USE 5V SUPPLIES
L
1016 AI05
appenDix a
About Level Shifts
The TTL output of the LT1016 will interface with many
circuitsdirectly.Manyapplications,however,requiresome
form of level shifting of the output swing. With LT1016
based circuits this is not trivial because it is desirable to
maintain very low delay in the level shifting stage. When
designinglevelshifters,keepinmindthattheTTLoutputof
theLT1016isasink-sourcepair(FigureA1)withgoodabil-
ity to drive capacitance (such as feedforward capacitors).
Figure A2 shows a noninverting voltage gain stage with a
15V output. When the LT1016 switches, the base-emitter
voltages at the 2N2369 reverse, causing it to switch very
quickly. The 2N3866 emitter-follower gives a low imped-
ance output and the Schottky diode aids current sink
capability.
Figure A3 is a very versatile stage. It features a bipolar
swing that may be programmed by varying the output
transistor’s supplies. This 3ns delay stage is ideal for
driving FET switch gates. Q1, a gated current source,
switches the Baker-clamped output transistor, Q2. The
heavy feedforward capacitor from the LT1016 is the key
to low delay, providing Q2’s base with nearly ideal drive.
This capacitor loads the LT1016’s output transition (Trace
A, Figure A4), but Q2’s switching is clean (Trace B, Figure
A4) with 3ns delay on the rise and fall of the pulse.
FigureA5issimilartoFigureA2exceptthatasinktransistor
hasreplacedtheSchottkydiode.Thetwoemitter-followers
drive a power MOSFET which switches 1A at 15V. Most of
the 7ns to 9ns delay in this stage occurs in the MOSFET
and the 2N2369.
Whendesigninglevelshifters,remembertousetransistors
with fast switching times and high fTs. To get the kind of
results shown, switching times in the ns range and fTs
approaching 1GHz are required.
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