参数资料
型号: LT1886CS8#TRPBF
厂商: Linear Technology
文件页数: 11/16页
文件大小: 0K
描述: IC OPAMP DUAL 200MA 700MHZ 8SOIC
标准包装: 2,500
放大器类型: 通用
电路数: 2
转换速率: 200 V/µs
增益带宽积: 700MHz
电流 - 输入偏压: 1.5µA
电压 - 输入偏移: 1000µV
电流 - 电源: 7mA
电流 - 输出 / 通道: 800mA
电压 - 电源,单路/双路(±): 4 V ~ 13 V,±2 V ~ 6.5 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
4
LT1886
The q denotes specifications which apply over the full operating temp-
erature range, otherwise specifications are at TA = 25°C. VS = ±2.5V, VCM = 0V, pulse power tested unless otherwise noted. (Note 9)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The inputs are protected by back-to-back diodes. If the differential
input voltage exceeds 0.7V, the input current should be limited to less than
10mA.
Note 3: A heat sink may be required to keep the junction temperature
below absolute maximum.
Note 4: Thermal resistance varies depending upon the amount of PC board
metal attached to the device.
θJA is specified for a 2500mm2 test board
covered with 2 oz copper on both sides.
Note 5: Input offset voltage is exclusive of warm-up drift.
Note 6: Slew rate is measured between
±2V on a ±4V output with ±6V
supplies, and between
±1V on a ±1.5V output with ±2.5V supplies.
Note 7: Full power bandwidth is calculated from the slew rate:
FPBW = SR/2
πVP.
Note 8: This parameter is not 100% tested.
Note 9: The LT1886C is guaranteed to meet specified performance from 0
°C
to 70
°C. The LT1886C is designed, characterized and expected to meet
specified performance from –40
°C to 85°C but is not tested or QA sampled
at these temperatures. For guaranteed I-grade parts, consult the factory.
Note 10: The LT1886C is guaranteed functional over the operating temperature
range of –40
°C to 85°C.
ISC
Short-Circuit Current (Sourcing)
(Note 3)
600
mA
Short-Circuit Current (Sinking)
400
mA
SR
Slew Rate
AV = –10 (Note 6)
66
100
V/
s
q
60
V/
s
Full Power Bandwidth
1V Peak (Note 7)
16
MHz
GBW
Gain Bandwidth
f = 1MHz
530
MHz
tr, tf
Rise Time, Fall Time
AV = 10, 10% to 90% of 0.1V, RL = 100
7ns
Overshoot
AV = 10, 0.1V, RL = 100
5%
Propagation Delay
AV = 10, 50% VIN to 50% VOUT, 0.1V, RL = 100
5ns
Harmonic Distortion
HD2, AV = 10, 2VP-P, f = 1MHz, RL = 100/25
– 75/– 64
dBc
HD3, AV = 10, 2VP-P, f = 1MHz, RL = 100/25
– 80/– 66
dBc
IMD
Intermodulation Distortion
AV = 10, f = 0.9MHz, 1MHz, 5dBm, RL = 100/25
– 77/– 85
dBc
ROUT
Output Resistance
AV = 10, f = 1MHz
0.2
Channel Separation
VOUT = ±1V, RL = 25
82
92
dB
q
80
dB
IS
Supply Current
Per Amplifier
5
5.75
mA
q
6.25
mA
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Supply Current vs Temperature
Input Common Mode Range vs
Supply Voltage
Input Bias Current vs Input
Common Mode Voltage
TEMPERATURE (
°C)
–50
–25
0
25
50
75
100
125
SUPPLY
CURRENT
(mA)
1886 G01
15
10
5
0
VS = ±6V
VS = ±2.5V
TOTAL SUPPLY VOLTAGE (V)
0
2
4
6
8
10
12
14
COMMON
MODE
RANGE
(V)
1886 G02
V+
–0.1
–0.2
–0.3
1.5
1.0
0.5
V
TA = 25°C
VOS > 1mV
INPUT COMMON MODE VOLTAGE (V)
–6
–2
2
–4
0
4
6
INPUT
BIAS
CURRENT
(
A)
1886 G03
3.0
2.5
2.0
1.5
1.0
0.5
0
TA = 25°C
IB = (IB+ + IB–)/2
VS = ±6V
VS = ±2.5V
ELECTRICAL CHARACTERISTICS
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