参数资料
| 型号： | LT4351IMS#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC CTLR MOSFET DIODE-OR 10MSOP |
| 标准包装： | 50 |
| 应用： | 并行/冗余电源 |
| FET 型： | N 沟道 |
| 输出数： | 1 |
| 内部开关： | 无 |
| 延迟时间 - 关闭： | 600ns |
| 电源电压： | 1.2 V ~ 18 V |
| 电流 - 电源： | 1.4mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 管件 |
| 产品目录页面： | 1338 (CN2011-ZH PDF) |
LT4351
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T A = 25°C. V IN = V OUT = 5V, V DD = 16.1V, V UV = 0.4V, V OV = 0.2V, GATE Open, unless
otherwise specified.
SYMBOL
I OV
V F(ON)
I F(OFF)
PARAMETER
OV Input Bias Current
FAULT Pin On-Voltage
FAULT Pin Leakage Current
CONDITIONS
V OV = V OV(TH) – 10mV
I F = 5mA in Fault Condition
V F = 30V, V IN = 4.9V
l
l
l
MIN
TYP
–100
0.14
0.04
MAX
–400
0.25
1
UNITS
V
V
μA
Boost Supply
V BR
Boost Regulation Trip Voltage
Measured as V DD to V IN , Rising Edge
l
10.2
10.7
11.4
V
t OFF
Boost Supply Off-Time
600
ns
I SWLIM
Boost Supply Switch Current Limit
l
350
450
650
mA
Gate Drive
V IOR
Input-to-Output Regulated Voltage
l
4
15
25
mV
?V GL
Gate Voltage Limit
V IN = 5V, V OUT = 4.9V, V DD = 13V Measured with
Respect to V DD
l
–2.3
–3
V
?V G(MAX)
V G(OFF)
Maximum Gate Voltage
Gate Off-Voltage
V IN = 5V, V OUT = 4.9V, V DD = 16.1V Measured with
Respect to V OUT
V OUT = 5.1V
l
l
7
7.4
0.16
7.8
0.30
V
V
I GSO
I GSK
V DD
Gate Source Current
Gate Sink Current
Operating Range
V OUT = 4.9V, V GATE = 9V
V OUT = 5.1V, V GATE = 9V
l
0.670
0.670
30
A
A
V
I VDD
V DD Supply Current
V IN = 1.2V, V OUT = 1.1V, V DD = 12.3V, GATE Open
V IN = 18V, V OUT = 17.9V, V DD = 29.1V, GATE Open
l
l
3
3.6
4
5.6
mA
mA
Status Functions
?V GIS
Minimum Gate Voltage for Turning V OUT = 4.9V, I STATUS = 1mA
On Status
l
0.75
1
V
V IOGF
V ST(ON)
I ST(OFF)
V IN to V OUT Fault Voltage with
Open Gate
Status Pin On-Voltage
Status Pin Leakage Current
V OUT Falling, Measured with Respect to V IN
I ST = 5mA, V OUT = 4.9V, Status On
V ST = 30V, Status Off, V IN = 4.9V
l
l
185
210
0.13
0.04
230
0.25
1
mV
V
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: T J is calculated from the ambient temperature T A and power
dissipation P D according to the following formula:
T J = T A + (P D ? 120°C/W)
4351fd
3
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