参数资料
型号: LTC1473LCGN#TRPBF
厂商: Linear Technology
文件页数: 7/16页
文件大小: 0K
描述: IC SWITCH DVR PWRPATH DUAL16SSOP
标准包装: 2,500
系列: PowerPath™
应用: 手持/移动设备
FET 型: N 沟道
输出数: 2
内部开关:
延迟时间 - 开启: 22µs
延迟时间 - 关闭: 1µs
电源电压: 2.8 V ~ 9 V
电流 - 电源: 100µA
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
供应商设备封装: 16-SSOP
包装: 带卷 (TR)
LTC1473L
OPERATIO
The LTC1473L is responsible for low-loss switching and
isolation for a dual supply system, where during a power
backup situation, a battery pack can be connected or
disconnected seamlessly. Smooth switching between in-
put power sources is accomplished with the help of
low-loss N-channel switches. They are driven by special
gate drive circuitry which limits the inrush current in and
out of the battery packs and the system power supply
capacitors.
All N-Channel Switching
Figure 2 shows a block diagram of a switch driver pair, SW
A1/B1. A bidirectional current sensing and limiting circuit
determines when the voltage drop across R SENSE reaches
± 200mV. The gate-to-source voltage, V GS , of the appro-
priate switch is limited during the transition period until
the inrush current subsides.
This scheme allows capacitors and MOSFET switches of
differing sizes and current ratings to be used in the same
system without circuit modifications.
The LTC1473L drives external back-to-back N-channel
DCIN
BAT1
MOSFET switches to direct power from two sources: the
primary battery and the secondary battery, or a battery and
a DC power supply. (N-channel MOSFET switches are
more cost effective and provide lower voltage drops than
LTC1473L
V +
L1
1mH
their P-channel counterparts.)
TO GATE
(8.5V + V + )
V GG
Gate Drive (V GG ) Power Supply
The gate drive for the low-loss N-channel switches is
supplied by an internal micropower boost regulator which
is regulated at approximately 8.5V above V + , up to 20V
DRIVERS
V GG
SWITCHING
REGULATOR
SW
C2
1 μ F
25V
C1
1 μ F
25V
maximum. In a DC supply and backup battery system, the
LTC1473L V + pin is diode ORed through two external
Schottky diodes connected to the two main power sources,
DCIN and BAT1. Thus, V GG is regulated at 8.5V above the
higher power source and will provide the overdrive
GND
Figure 1. V GG Switching Regulator
1473 F01
required to fully enhance the MOSFET switches.
For maximum efficiency the input to the boost regulator
inductor is connected to V + as shown in Figure 1. C1
provides filtering to the input of the 1mH switched induc-
BAT1
SW A1
GA1
SW B1
SAB1 GB1
R SENSE
V SENSE +
V SENSE –
+
OUTPUT
LOAD
C OUT
tor, L1, which is housed in a small surface mount package.
An internal diode directs the current from the 1mH induc-
6V
6V
± 200mV
THRESHOLD
tor to the V GG output capacitor C2.
Inrush and Short-Circuit Current Limiting
The LTC1473L uses an adaptive inrush current limiting
scheme to reduce current flowing in and out of the battery
and the following system’s input capacitor during switch-
V GG
LTC1473L
SW A/B
GATE
DRIVERS
BIDIRECTIONAL
INRUSH CURRENT
SENSING AND
LIMITING
1473 F02
over transitions. The voltage across a single small valued
Figure 2. SW A1/B1 Inrush Current Limiting
resistor, R SENSE , is measured to ascertain the instanta-
neous current flowing through either of the two switch
pairs, SW A1/B1 and SW A2/B2, during the transitions.
7
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