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参数资料
| 型号： | LTC1628IG#PBF |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 稳压器 |
| 英文描述： | 3 A SWITCHING CONTROLLER, 310 kHz SWITCHING FREQ-MAX, PDSO28 |
| 封装： | 0.209 INCH, PLASTIC, SSOP-28 |
| 文件页数： | 7/32页 |
| 文件大小： | 360K |
| 代理商： | LTC1628IG#PBF |
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15
LTC1628/LTC1628-PG
EXTVCC Pin Connection). Consequently, logic-level
threshold MOSFETs must be used in most applications.
The only exception is if low input voltage is expected
(VIN < 5V); then, sub-logic level threshold MOSFETs
(VGS(TH) < 3V) should be used. Pay close attention to the
BVDSS specification for the MOSFETs as well; most of the
logic level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the “ON”
resistance RDS(ON), reverse transfer capacitance CRSS,
input voltage and maximum output current. When the
LTC1628 is operating in continuous mode the duty cycles
for the top and bottom MOSFETs are given by:
Main Switch Duty Cycle
V
OUT
IN
=
Synchronous Switch Duty Cycle
VV
V
IN
OUT
IN
=
–
The MOSFET power dissipations at maximum output
current are given by:
P
V
IR
kV
I
C
f
MAIN
OUT
IN
MAX
DS ON
IN
MAX
RSS
=
() +
()
+
() ( )( )( )
2
1
δ
()
P
VV
V
IR
SYNC
IN
OUT
IN
MAX
DS ON
=
() +
()
–
()
2
1
δ
where
δ is the temperature dependency of RDS(ON) and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I2R losses while the topside N-channel
equation includes an additional term for transition losses,
which are highest at high input voltages. For VIN < 20V the
high current efficiency generally improves with larger
MOSFETs, while for VIN > 20V the transition losses rapidly
increase to the point that the use of a higher RDS(ON) device
with lower CRSS actually provides higher efficiency. The
synchronous MOSFET losses are greatest at high input
voltage when the top switch duty factor is low or during a
short-circuit when the synchronous switch is on close to
100% of the period.
The term (1+
δ) is generally given for a MOSFET in the form
of a normalized RDS(ON) vs Temperature curve, but
δ = 0.005/°C can be used as an approximation for low
voltage MOSFETs. CRSS is usually specified in the MOS-
FET characteristics. The constant k = 1.7 can be used to
estimate the contributions of the two terms in the main
switch dissipation equation.
The Schottky diode D1 shown in Figure 1 conducts during
the dead-time between the conduction of the two power
MOSFETs. This prevents the body diode of the bottom
MOSFET from turning on, storing charge during the dead-
time and requiring a reverse recovery period that could
cost as much as 3% in efficiency at high VIN. A 1A to 3A
Schottky is generally a good compromise for both regions
of operation due to the relatively small average current.
Larger diodes result in additional transition losses due to
their larger junction capacitance.
CIN and COUT Selection
The selection of CIN is simplified by the multiphase archi-
tecture and its impact on the worst-case RMS current
drawn through the input network (battery/fuse/capacitor).
It can be shown that the worst case RMS current occurs
when only one controller is operating. The controller with
the highest (VOUT)(IOUT) product needs to be used in the
formula below to determine the maximum RMS current
requirement. Increasing the output current, drawn from
the other out-of-phase controller, will actually decrease
the input RMS ripple current from this maximum value
(see Figure 4). The out-of-phase technique typically re-
duces the input capacitor’s RMS ripple current by a factor
of 30% to 70% when compared to a single phase power
supply solution.
The type of input capacitor, value and ESR rating have
efficiency effects that need to be considered in the selec-
tion process. The capacitance value chosen should be
sufficient to store adequate charge to keep high peak
battery currents down. 20
F to 40F is usually sufficient
for a 25W output supply operating at 200kHz. The ESR of
the capacitor is important for capacitor power dissipation
as well as overall battery efficiency. All of the power (RMS
ripple current ESR) not only heats up the capacitor but
wastes power from the battery.
APPLICATIO S I FOR ATIO
WU
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LTC1628IG-PG | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1628IG-PG#PBF | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1628IG-PG#TR | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1628IG-PG#TRPBF | 功能描述:IC REG CTRLR BUCK PWM CM 28-SSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,500 系列:PowerWise® PWM 型:控制器 输出数:1 频率 - 最大:1MHz 占空比:95% 电源电压:2.8 V ~ 5.5 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 125°C 封装/外壳:6-WDFN 裸露焊盘 包装:带卷 (TR) 配用:LM1771EVAL-ND - BOARD EVALUATION LM1771 其它名称:LM1771SSDX |
| LTC1628IGSYNC | 制造商:Linear Technology 功能描述: |
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