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参数资料
| 型号： | LTC3549EDCB#TR |
| 厂商： | LINEAR TECHNOLOGY CORP |
| 元件分类： | 稳压器 |
| 英文描述： | 0.6 A SWITCHING REGULATOR, 2700 kHz SWITCHING FREQ-MAX, PDSO6 |
| 封装： | 2 X 3 MM, 0.75 MM HEIGHT, PLASTIC, MO-229, DFN-6 |
| 文件页数： | 10/16页 |
| 文件大小： | 352K |
| 代理商： | LTC3549EDCB#TR |
LTC3549
3
3549f
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime. Voltage on any pin may not exceed 6V.
Note 2: The LTC3549E is guaranteed to meet performance specications
from 0°C to 85°C. Specications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula:
LTC3549: TJ = TA + (PD)(64°C/W)
This IC includes overtemperature protection that is intended to protect the
device during momentary overload conditions. Overtemperature protection
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
IS
Input DC Bias Current
Active Mode
Sleep Mode
Shutdown
(Note 5)
VOUT = 90%, ILOAD = 0A
VOUT = 103%, ILOAD = 0A
VRUN = 0V, VIN = 5.5V
300
50
0.1
475
95
5
A
fOSC
Nominal Oscillator Frequency
●
1.8
2.25
2.7
MHz
tSS
Soft-Start Period
RUN↑
1ms
RPFET
RDS(ON) of P-Channel FET
ISW = 100mA, Wafer Level
ISW = 100mA, DD Package (Note 7)
0.5
0.56
Ω
RNFET
RDS(ON) of N-Channel FET
ISW = 100mA, Wafer Level
ISW = 100mA, DD Package (Note 7)
0.35
0.4
Ω
ILSW
SW Leakage
VRUN = 0V, VSW = 0V or 5.5V, VIN = 5.5V
±0.1
±1
A
The ● denotes the specications which apply over the full operating
temperature range, otherwise specications are at TA = 25°C, VIN = 2.2V.
ELECTRICAL CHARACTERISTICS
becomes active at a junction temperature greater than the maximum
operating junction temperature. Continuous operation above the specied
maximum operating junction temperature may impair device reliability.
Note 4: The LTC3549 is tested in a proprietary test mode that connects VFB
to the output of the error amplier.
Note 5: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency.
Note 6: ΔVOVL is the amount VFB must exceed the regulated feedback
voltage.
Note 7: Determined by design, not production tested.
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| LTC3550EDHC#PBF | 功能描述:IC CHARGER BATT DUAL 16-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 标准包装:61 系列:- 功能:电源管理 电池化学:锂离子（Li-Ion）、锂聚合物（Li-Pol） 电源电压:4.35 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:22-WFDFN 裸露焊盘 供应商设备封装:22-DFN（6x3）裸露焊盘 包装:管件 |
| LTC3550EDHC#TRPBF | 功能描述:IC CHARGER BATT DUAL 16-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 标准包装:61 系列:- 功能:电源管理 电池化学:锂离子（Li-Ion）、锂聚合物（Li-Pol） 电源电压:4.35 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:22-WFDFN 裸露焊盘 供应商设备封装:22-DFN（6x3）裸露焊盘 包装:管件 |
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