参数资料
型号: LTC3602EFE#PBF
厂商: Linear Technology
文件页数: 3/20页
文件大小: 0K
描述: IC REG BUCK SYNC ADJ 16TSSOP
标准包装: 95
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 0.6 V ~ 9.5 V
输入电压: 4.5 V ~ 10 V
PWM 型: 电流模式,混合
频率 - 开关: 1MHz
电流 - 输出: 2.5A
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-TSSOP(0.173",4.40mm)裸露焊盘
包装: 管件
供应商设备封装: 16-TSSOP-EP
产品目录页面: 1335 (CN2011-ZH PDF)
LTC3602
ELECTRICAL CHARACTERISTICS The l denotes the speci?cations which apply over the full operating
temperature range, otherwise speci?cations are at T A = 25°C. V IN = 8.4V unless otherwise speci?ed.
SYMBOL
Δ V PGOOD
R PGOOD
PARAMETER
Power Good Range
Power Good Resistance
CONDITIONS
MIN
TYP
±10
11
MAX
±12
18
UNITS
%
Ω
I FB
g m
I S
FB Input Bias Current
Transconductance Ampli?er g m
Supply Current
(Note 4)
10
1.7
nA
ms
Active Mode
Sleep Mode
Shutdown
500
75
0.2
700
100
1
μA
μA
μA
INTV CC
t ON, MIN
V CC LDO Output Voltage
Minimum Controllable ON-Time
4.8
5
90
5.2
V
ns
V RUN
RUN Pin ON Threshold
V RUN Rising
l
0.4
0.7
1
V
I TRACK/SS
TRACK/SS Pull-Up Current
1.25
μA
f OSC
f SYNC
Oscillator Frequency
SYNC Capture Range
R T = 105k
0.8
0.3
1
1.2
3
MHz
MHz
R DS(ON)
Top Switch On-Resistance
Bottom Switch On-Resistance
90
67
I LIM
I LSW
Peak Current Limit
Switch Leakage Current
3.8
4.5
0.1
5.2
1
A
μA
V UVLO
INTV CC Undervoltage Lockout
INTV CC Ramping Up
4.1
4.2
4.3
V
V UVLO, HYS
INTV CC Undervoltage Lockout Hysteresis
700
mV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3602E is guaranteed to meet performance speci?cations
from 0°C to 85°C. Speci?cations over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: The LTC3602 is tested in a feedback loop that adjusts V FB to
achieve a speci?ed error ampli?er output voltage (I TH ).
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: T J is calculated from the ambient temperature T A and the power
dissipation as follows: T J = T A + (P D )( θ JA C/W).
Note 6: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the speci?ed maximum operating junction
temperature may impair device reliability.
Note 7: This limit indicates the current density limitations of the internal
metallization and it is not tested in production.
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT
VOLTAGE
50mV/DIV
INDUCTOR
CURRENT
500mA/DIV
Burst Mode Operation
V IN = 7V
V OUT = 3.3V
LOAD = 50mA
OUTPUT
VOLTAGE
100mV/DIV
LOAD
CURRENT
1A/DIV
Load Step Transient Forced Continuous
V IN = 7V
V OUT = 3.3V
10μs/DIV
3602 G01
10μs/DIV
3602 G02
3602fb
3
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