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| 型号： | LTC3773EUHF#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 16/32页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM 38-QFN |
| 标准包装： | 52 |
| 系列： | PolyPhase® |
| PWM 型： | 电流模式 |
| 输出数： | 3 |
| 频率 - 最大： | 630kHz |
| 占空比： | 98.5% |
| 电源电压： | 3.3 V ~ 36 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 38-WFQFN 裸露焊盘 |
| 包装： | 管件 |
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LTC3773
APPLICATIONS INFORMATION
Main Switch Duty Cycle = OUT
Synchronous Switch Duty Cycle = IN
P MAIN = OUT (I MAX 2 )(1 + )R DS(ON) +
V IN2 MAX (R DR )(C MILLER ) ?
mainlydependsonthepricevssizerequirementsandany
radiated ?eld/EMI requirements. New designs for high cur-
rent surface mount inductors are available from numerous
manufacturers, including Coiltronics, Vishay, TDK, Pulse,
Panasonic, Vitec, Coilcraft, Toko and Sumida.
Power MOSFET and Schottky Diode Selection
At least two external power MOSFETs must be selected for
each of the three output sections: One N-channel MOSFET
for the top (main) switch and one or more N-channel
MOSFET(s) for the bottom (synchronous) switch. The
number, type and on-resistance of all MOSFETs selected
take into account the voltage step-down ratio as well as
the actual position (main or synchronous) in which the
MOSFET will be used. A much smaller and much lower
input capacitance MOSFET should be used for the top
MOSFET in applications that have an output voltage that
is less than 1/3 of the input voltage. In applications where
V IN >> V OUT , the top MOSFETs’ on-resistance is normally
less important for overall ef?ciency than its input capaci-
tance at operating frequencies above 300kHz. MOSFET
manufacturers have designed special purpose devices that
provide reasonably low on-resistance with signi?cantly
reduced input capacitance for the main switch application
in switching regulators.
The peak-to-peak MOSFET gate drive levels are set by
the driver supply voltage, V DR , requiring the use of logic-
level threshold MOSFETs in most applications. Pay close
attention to the BV DSS speci?cation for the MOSFETs as
well; many of the logic-level MOSFETs are limited to 30V
or less.
Selection criteria for the power MOSFETs include the on-
resistance R DS(ON) , input capacitance, input voltage and
maximum output current. MOSFET input capacitance is
V IN
+
MILLER EFFECT –
V GS
a combination of several components but can be taken
from the typical “gate charge” curve included on most data
sheets as shown in Figure 2. The curve is generated by
forcing a constant input current into the gate of a common
source, current source loaded stage and then plotting the
gate voltage versus time. The initial slope is the effect of the
gate-to-source and the gate-to-drain capacitance. The ?at
portion of the curve is the result of the Miller multiplication
effect of the drain-to-gate capacitance as the drain drops the
voltage across the current source load. The upper sloping
line is due to the drain-to-gate accumulation capacitance
and the gate-to-source capacitance.
The Miller charge (the increase in coulombs on the hori-
zontal axis from A to B while the curve is ?at) is speci?ed
for a given V DS drain voltage, but can be adjusted for
different V DS voltages by multiplying by the ratio of the
application V DS to the curve speci?ed V DS values. A way
to estimate the C MILLER term is to take the change in gate
charge from points A and B on a manufacturers data sheet
and divide by the stated V DS voltage speci?ed. C MILLER
is the most important selection criterion for determining
the transition loss term in the top MOSFET but is not di-
rectly speci?ed on MOSFET data sheets. C RSS and C OS are
speci?ed sometimes but de?nitions of these parameters
are not included.
When the controller is operating in continuous mode the
duty cycles for the top and bottom MOSFETs are given by:
V
V IN
V – V OUT
V IN
The power dissipation for the main and synchronous
MOSFETs at maximum output current is given by:
V
V IN
I
2
+
–
+
(f)
(I MAX 2 )(1 + )R DS(ON)
A B
+ V DS
V GS
–
Q IN
C MILLER = (Q B – Q A )/V DS 3773 F02
Figure 2. MOSFET Miller Capacitance
P SYNC =
V DR – V TH(IL) V TH(IL)
V IN – V OUT
V IN
1 1
3773fb
16
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