参数资料
型号: LTC3778EF#TR
厂商: Linear Technology
文件页数: 21/24页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 20TSSOP
标准包装: 2,500
PWM 型: 电流模式
输出数: 1
电源电压: 4 V ~ 36 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 20-TSSOP(0.173",4.40mm 宽)
包装: 带卷 (TR)
其它名称: LTC3778EFTR
LTC3778
APPLICATIO S I FOR ATIO
? Segregate the signal and power grounds. All small
signal components should return to the SGND pin at
one point which is then tied to the PGND pin close to the
source of M2.
? Place M2 as close to the controller as possible, keeping
the PGND, BG and SW traces short.
? Connect the input capacitor(s) C IN close to the power
MOSFETs. This capacitor carries the MOSFET AC cur-
rent.
TYPICAL APPLICATIO S
Figure 10 shows a DDR memory termination application in
which the output can sink and source up to 6A of current.
? Keep the high dV/dT SW, BOOST and TG nodes away
from sensitive small-signal nodes.
? Connect the INTV CC decoupling capacitor C VCC closely
to the INTV CC and PGND pins.
? Connect the top driver boost capacitor C B closely to the
BOOST and SW pins.
? Connect the V IN pin decoupling capacitor C F closely to
the V IN and PGND pins.
an offset to the SENSE – pin so that the current limit is
symmetrical during both sink and source.
The resistive divider of R1 and R2 are meant to introduce
V IN
C SS
0.1 μ F
1
2
R PG
100k 3
LTC3778
RUN/SS BOOST
VON TG
PGOOD SW
20
19
18
D B
CMDSH-3
C B
0.22 μ F
M1
IRF7811
L1, 1.8 μ H
C IN
10 μ F
35V
× 3
5V TO 25V
330 μ F
25V,
SANYO
ELECTROLYTIC
V OUT
1.25V
± 6A
C C1
1500pF R C
20k
C C2
100pF
4
5
6
V RNG
I TH
FCB
SENSE +
SENSE –
PGND
17
16
15
R2
68 ?
R1
1.2k
M2
IRF7811
D1
B340A
+
C OUT1-2
180 μ F
4V
× 2
C OUT3
22 μ F
6.3V
X7R
7
SGND
BG
14
C ON , 0.01 μ F
R1
8
I ON
DRV CC
13
C VCC
4.7 μ F
12.7k
R2
11.7k
R ON
227k
9
10
V FB
EXTV CC
INTV CC
V IN
12
11
R F
1 ?
C F
0.1 μ F
3778 F11
C IN : UNITED CHEMICON THCR60EIHI06ZT
C OUT1-2 : CORNELL DUBILIER ESRE181E04B
L1: SUMIDA CEP125-1R8MC-H
Figure 10. 1.25V/ ± 6A Sink and Source at 550kHz
3778f
21
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