参数资料
型号: LTC3822EGN-1#PBF
厂商: Linear Technology
文件页数: 13/24页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 16-SSOP
标准包装: 100
PWM 型: 电流模式
输出数: 1
频率 - 最大: 850kHz
占空比: 99%
电源电压: 2.75 V ~ 4.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 16-SSOP(0.154",3.90mm 宽)
包装: 管件
产品目录页面: 1336 (CN2011-ZH PDF)
LTC3822-1
APPLICATIONS INFORMATION
2.0
1.5
1.0
0.5
gate drive (V IN ) voltage, the MOSFETs ultimately should
be evaluated in the actual LTC3822-1 application circuit
to ensure proper operation.
Shoot-through between the MOSFETs can most easily
be spotted by monitoring the input supply current. As
the input supply voltage increases, if the input supply
current increases dramatically, then the likely cause is
shoot-through.
0
– 50
0 50 100
JUNCTION TEMPERATURE ( ° C)
150
Run and Soft-Start/Tracking Functions
The LTC3822-1 has a low power shutdown mode which is
38221 F02
Figure 2. R DS(ON) vs Temperature
The MOSFET power dissipations at maximum output
current are:
controlled by the RUN pin. Pulling the RUN pin below 1.1V
puts the LTC3822-1 into a low quiescent current shutdown
mode (I Q = 7.2μA). Releasing the RUN pin, an internal
0.7μA (at V IN = 3.3V) current source will pull the RUN pin
up to V IN , which enables the controller. The RUN pin can
be driven directly from logic as showed in Figure 3.
P TOP =
V OUT
V IN
? I OUT ( MAX ) 2 ? ρ T ? R DS ( ON ) + 2 ? V IN 2
3.3V
LTC3822-1
RUN
LTC3822-1
RUN
V IN OUT
? I OUT ( MAX ) 2 ? ρ T DS ( ON )
P BOT =
? I OUT ( MAX ) ? C RSS ? f
– V
? R
V IN
Both MOSFETs have I 2 R losses and the P TOP equation
includes an additional term for transition losses, which are
largest at high input voltages. The bottom MOSFET losses
are greatest at high input voltage or during a short-circuit
when the bottom duty cycle is 100%.
The LTC3822-1 utilizes a non-overlapping, anti-shoot-
through gate drive control scheme to ensure that the
MOSFETs are not turned on at the same time. To function
properly, the control scheme requires that the MOSFETs
38221 F03
Figure 3. RUN Pin Interfacing
Once the controller is enabled, the start-up of V OUT is con-
trolled by the state of the TRACK/SS pin. If the TRACK/SS
pin is connected to V IN , the start-up of V OUT is controlled
by internal soft-start, which slowly ramps the positive
reference to the error ampli?er from 0V to 0.6V, allowing
V OUT to rise smoothly from 0V to its ?nal value. The de-
fault internal soft-start time is around 1ms. The soft-start
time can be changed by placing a capacitor between the
TRACK/SS pin and GND. In this case, the soft-start time
will be approximately:
used are intended for DC/DC switching applications. Many
power MOSFETs are intended to be used as static switches
and therefore are slow to turn on or off.
t SS = C SS ?
600mV
1 μ A
Reasonable starting criteria for selecting the MOSFETs
are that they must typically have a gate charge (Q G ) less
than 30nC (at 2.5V GS ) and a turn-off delay (t D(OFF) ) of less
than approximately 140ns. However, due to differences
in test and speci?cation methods of various MOSFET
manufacturers, and in the variations in Q G and t D(OFF) with
where 1μA is an internal current source which is always
on.
When the voltage on the TRACK/SS pin is less than the
internal 0.6V reference, the LTC3822-1 regulates the V FB
voltage to the TRACK/SS pin voltage instead of 0.6V.
Therefore the start-up of V OUT can ratiometrically track
38221f
13
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