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| 型号： | LTC4413EDD-2#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC IDEAL DIODE DUAL 10-DFN |
| 标准包装： | 121 |
| 应用： | 手持/移动设备 |
| FET 型： | P 沟道 |
| 输出数： | 2 |
| 内部开关： | 是 |
| 延迟时间 - 开启： | 11µs |
| 延迟时间 - 关闭： | 2µs |
| 电源电压： | 2.5 V ~ 5.5 V |
| 电流 - 电源： | 40µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 管件 |
LTC4413-1/LTC4413-2
ELECTRICAL CHARACTERISTICS The l denotes the speci?cations which apply over the full operating
temperature range, otherwise speci?cations are at T A = 25°C. (Notes 2, 6)
SYMBOL
I QROUTB
PARAMETER
Quiescent Current While in Reverse
CONDITIONS
V INA = V INB = 0V, V OUTA = 3.6V, V OUTB = 5.5V
l
MIN
TYP
3.5
MAX
6.5
UNITS
μA
Turn-Off. Current Drawn from V OUTA When
OUTB Supplies Chip Power
I QOFF
Quiescent Current with Both ENBA and
V INA = V INB = 3.6V, V ENBA = V ENBB = 1V
l
28
38
μA
ENBB High
V RTO
V FWD
Reverse Turn-Off Voltage (V OUT – V IN )
Forward Voltage Drop (V IN – V OUT )
V IN = 3.6V
V IN = 3.6V
l
l
–5
18
10
24
mV
mV
at I OUT = –1mA
R FWD
R ON
On-Resistance, R FWD Regulation
(Measured as Δ V/ Δ I)
On-Resistance, R ON Regulation
V IN = 3.6V, I OUT = –100mA to –500mA (Note 5)
V IN = 3.6V, I IN = 1A (Note 5)
100
140
140
200
mΩ
mΩ
(Measured as V/I at I IN = 1A)
t ON
PowerPath Turn-On Time
V IN = 3.6V, from ENB Falling to I OUT Ramp
11
μs
Starting
t OFF
PowerPath Turn-Off Time
V IN = 3.6V, from ENB Rising with I IN = 100mA
2
μs
Falling to 0mA
Short-Circuit Response
I OC
Current Limit
V INA OR B = 3.6V (Note 5)
1.8
A
I QOC
Quiescent Current While in Overcurrent
V INA OR B = 3.6V, I OUT = 1.8A (Note 5)
100
130
μA
Operation
STAT Output
I SOFF
I SON
STAT Off Current
STAT Sink Current
Shut Down
V IN > V OUT , V CTL < V IL , T J < 135°C, I OUT < I MAX
l
l
–1
7
0
11
1
15
μA
μA
t S(ON)
t S(OFF)
STAT Pin Current Turn-On Time
STAT Pin Current Turn-Off Time
V IN = 3.6V, from ENB Falling
V IN = 3.6V, from ENB Rising
1.8
0.8
μs
μs
ENB Inputs
V ENBIH
ENB Inputs Rising Threshold Voltage
V ENB Rising
l
540
600
mV
V ENBIL
V ENBHYST
ENB Inputs Falling Threshold Voltage
ENB Input Hysteresis
V ENB Falling
V ENBHYST = (V ENBIH – V ENBIL )
l
400
460
90
mV
mV
I ENB
ENB Inputs Pull-Down Current
V OUT < V IN = 3.6V, V ENB < V IL
l
2
3
4
μA
OVI Input (LTC4413-2 Only)
V OVIH
OVI Input Rising Threshold Voltage
V OVI Rising
5.9
6.2
V
V OVIL
V OVID
I OVI
OVI Input Falling Threshold Voltage
OVI-OVP Voltage Drop
OVI Bias Current
V OVI Falling
V OVI = 8V, No Load at OVP
V OVI = 8V
5.4
5.6
100
80
V
mV
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4413-1/LTC4413-2 are guaranteed to meet performance
speci?cations from 0°C to 85°C. Speci?cations over the –40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 3: Quiescent current increases with diode current: refer to plot of
I QF vs I OUT .
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions.
Overtemperature protection will become active at a junction temperature
greater than the maximum operating temperature. Continuous operation
above the speci?ed maximum operating junction temperature may impair
device reliability.
Note 5: Speci?cation is guaranteed by correlation to wafer-level
measurements.
Note 6: Unless otherwise speci?ed, current into a pin is positive and
current out of a pin is negative. All voltages referenced to GND.
441312fd
3
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