参数资料
| 型号： | LTC4413EDD#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC IDEAL DIODE DUAL 10-DFN |
| 标准包装： | 121 |
| 应用： | 手持/移动设备 |
| FET 型： | P 沟道 |
| 输出数： | 2 |
| 内部开关： | 是 |
| 延迟时间 - 开启： | 11µs |
| 延迟时间 - 关闭： | 2µs |
| 电源电压： | 2.5 V ~ 5.5 V |
| 电流 - 电源： | 25µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 管件 |
| 产品目录页面： | 1338 (CN2011-ZH PDF) |
LTC4413
ABSOLUTE MAXIMUM RATINGS
(Note 1)
INA, INB, OUTA, OUTB, STAT,
PIN CONFIGURATION
TOP VIEW
ENBA, ENBB Voltage .................................... –0.3V to 6V
INA
1
10 OUTA
Operating Temperature Range.................. –40°C to 85°C
Storage Temperature Range................... –65°C to 125°C
Junction Temperature (Note 4) ............................. 125°C
ENBA
GND
ENBB
INB
2
3
4
5
11
9 STAT
8 NC
7 NC
6 OUTB
Continuous Power Dissipation
(Derate 25mW/°C Above 70°C) .........................1500mW
DD PACKAGE
10-LEAD (3mm 3mm) PLASTIC DFN
T JMAX = 125°C, θ JA = 40°C/W (4-LAYER PCB)
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
LTC4413EDD#PBF
TAPE AND REEL
LTC4413EDD#TRPBF
PART MARKING
LBGN
PACKAGE DESCRIPTION
10-Lead (3mm × 3mm) Plastic DFN
TEMPERATURE RANGE
–40°C to 85°C
Consult LTC Marketing for parts speci?ed with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based ?nish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel speci?cations, go to: http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS The l denotes the speci?cations which apply over the full operating
temperature range, otherwise speci?cations are at T A = 25°C. (Notes 2, 6)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V IN , V OUT
Operating Supply Range for Channel A or B
V IN and/or V OUT Must Be in This Range
l
2.5
5.5
V
for Proper Operation
UVLO
UVLO Turn-On Rising Threshold
UVLO Turn-Off Falling Threshold
Max (V INA , V INB , V OUTA , V OUTB )
Max (V INA , V INB , V OUTA , V OUTB )
l
l
1.7
2.4
V
V
I QF
Quiescent Current in Forward Regulation (Note 3) V INA = 3.6V, I OUTA = –100mA, V INB = 0V,
l
25
40
μA
I OUTB = 0mA
I QRIN
Quiescent Current While in Reverse
V IN = 3.6V, V OUT = 5.5V (Note 6)
l
–1
0.5
2
μA
Turn-Off, Current Drawn from V IN
I QRGND
Quiescent Current While in Reverse Turn-Off,
V INA = V INB = V OUTB = 0V, V OUTA = 5.5V,
22
30
μA
Measured Via GND
V STAT = 0V
I QROUTA
Quiescent Current While in Reverse Turn-Off,
V INA = V INB = V OUTB = 0V, V OUTA = 5.5V
l
17
31
μA
Current Drawn from V OUTA When OUTA
Supplies Chip Power
I QROUTB
Quiescent Current While in Reverse Turn-Off,
V INA = V INB = 0V, V OUTA < V OUTB = 5.5V
l
2
3
μA
Current Drawn from V OUTA When OUTB
Supplies Chip Power
I QOFF
Quiescent Current with Both ENBA
V INA = V INB = 3.6V, V ENBA and
l
20
31
μA
and ENBB High
V ENBB High, V STAT = 0V
4413fc
2
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