参数资料
| 型号： | LTC660CS8#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC REG DBL INV ADJ 0.1A 8SOIC |
| 标准包装： | 2,500 |
| 类型： | 倍增器，反相 |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | -1.5 V ~ -5.5 V，5 V ~ 11 V |
| 输入电压： | 1.5 V ~ 5.5 V，2.5 V ~ 5.5 V |
| 频率 - 开关： | 10kHz，80kHz |
| 电流 - 输出： | 100mA |
| 同步整流器： | 无 |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
| 供应商设备封装： | 8-SOIC |
LTC660
ABSOLUTE M AXI M U M RATINGS
PACKAGE/ORDER I N FOR M ATIO N
(Note 1)
Supply Voltage (V + ) .................................................. 6V
Input Voltage on Pins 1, 6, 7
BOOST 1
TOP VIEW
8 V +
ORDER PART
NUMBER
(Note 2) ............................ – 0.3V < V IN < (V + + 0.3V)
CAP
+
2
7 OSC
LTC660CN8
Output Short-Circuit Duration to GND
(Note 5) ............................................................. 1 sec
GND 3
CAP – 4
6 LV
5 V OUT
LTC660CS8
Power Dissipation.............................................. 500mW
Operating Temperature Range .................... 0 ° C to 70 ° C
Storage Temperature Range ................. – 65 ° C to 150 ° C
Lead Temperature (Soldering, 10 sec).................. 300 ° C
N8 PACKAGE
8-LEAD PLASTIC DIP
S8 PACKAGE
8-LEAD PLASTIC SOIC
T JMAX = 100 ° C, θ JA = 100 ° C/W (N)
T JMAX = 100 ° C, θ JA = 150 ° C/W (S)
S8 PART MARKING
660
Consult Factory for Industrial and Military grade parts.
ELECTRICAL CHARACTERISTICS
V + = 5V, C1 and C2 = 150 μ F, Boost = Open, C OSC = 0pF, T A = 25 ° C, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
R L = 1k
Inverter, LV = Open
Inverter, LV = GND
Doubler, LV = V OUT
q
q
q
3
1.5
2.5
5.5
5.5
5.5
V
V
V
I S
Supply Current
No Load
Boost = Open
Boost = V +
q
q
0.08
0.23
0.5
3
mA
mA
I OUT
Output Current
V OUT More Negative Than – 4V
q
100
mA
R OUT
f OSC
Output Resistance
Oscillator Frequency
Power Efficiency
I L = 100mA (Note 3)
Boost = Open
Boost = V + (Note 4)
R L = 1k Connected Between V + and V OUT
R L = 500 ? Connected Between V OUT and GND
q
q
q
96
92
6.5
10
80
98
96
10
?
kHz
kHz
%
%
I L = 100mA to GND
88
%
Voltage Conversion Efficiency
Oscillator Sink or Source Current
No Load
Boost = Open
Boost = V +
99
99.96
± 1.1
± 5.0
%
μ A
μ A
The q denotes specifications which apply over the full operating
temperature range; all other limits and typicals are at T A = 25 ° C.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Connecting any input terminal to voltages greater than V + or less
than ground may cause destructive latch-up. It is recommended that no
inputs from source operating from external supplies be applied prior to
power-up of the LTC660.
Note 3: The output resistance is a combination of internal switch
resistance and external capacitor ESR. To maximize output voltage and
efficiency, keep external capacitor ESR < 0.2 ? .
2
Note 4: f OSC is tested with C OSC = 100pF to minimize the effects of test
fixture capacitance loading. The 0pF frequency is correlated to this 100pF
test point, and is intended to simulate the capacitance at Pin 7 when the
device is plugged into a test socket and no external capacitor is used.
Note 5: OUT may be shorted to GND for 1 sec without damage, but
shorting OUT to V + may damage the device and should be avoided. Also,
for temperatures above 85 ° C, OUT must not be shorted to GND or V + ,
even instantaneously, or device damage may result.
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