- 您现在的位置：买卖IC网 > PDF目录377802 > M25P16-VMN3TP (意法半导体) 4 Mbit Uniform Sector, Serial Flash Memory PDF资料下载
参数资料
| 型号： | M25P16-VMN3TP |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 22/55页 |
| 文件大小： | 335K |
| 代理商： | M25P16-VMN3TP |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页当前第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页
Instructions
M25P16
22/55
6.4
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The
Status Register may be read at any time, even while a Program, Erase or Write Status
Register cycle is in progress. When one of these cycles is in progress, it is recommended to
check the Write In Progress (WIP) bit before sending a new instruction to the device. It is
also possible to read the Status Register continuously, as shown in
Figure 11
.
Table 6.
The status and control bits of the Status Register are as follows:
6.4.1
WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status
Register, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to
0 no such cycle is in progress.
6.4.2
WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable
Latch is reset and no Write Status Register, Program or Erase instruction is accepted.
6.4.3
BP2, BP1, BP0 bits
The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the area to
be software protected against Program and Erase instructions. These bits are written with
the Write Status Register (WRSR) instruction. When one or more of the Block Protect (BP2,
BP1, BP0) bits is set to 1, the relevant memory area (as defined in
Table 2
) becomes
protected against Page Program (PP) and Sector Erase (SE) instructions. The Block Protect
(BP2, BP1, BP0) bits can be written provided that the Hardware Protected mode has not
been set. The Bulk Erase (BE) instruction is executed if, and only if, all Block Protect (BP2,
BP1, BP0) bits are 0.
6.4.4
SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware Protected mode (when the Status Register
Write Disable (SRWD) bit is set to 1, and Write Protect (W) is driven Low). In this mode, the
non-volatile bits of the Status Register (SRWD, BP2, BP1, BP0) become read-only bits and
the Write Status Register (WRSR) instruction is no longer accepted for execution.
Status Register format
b7
b0
SRWD
0
0
BP2
BP1
BP0
WEL
WIP
Status Register Write Protect
Block Protect Bits
Write Enable Latch Bit
Write In Progress Bit
相关PDF资料 |
PDF描述 |
|---|---|
| M25P16-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMP3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMP3P | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P16-VMN3TP/4 | 功能描述:IC FLASH 16MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| M25P16-VMN3TPB | 功能描述:IC SRL FLSH 16MBIT 3V 75MHZ S08N RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| M25P16-VMN3YPB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE, SERIAL NOR, 16MB - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 75MHZ 8SO |
| M25P16VMN6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VMN6 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
发布紧急采购，3分钟左右您将得到回复。