参数资料
型号: M25P32VMN6G
厂商: 意法半导体
元件分类: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 14/39页
文件大小: 506K
代理商: M25P32VMN6G
21/39
M25P32
Page Program (PP)
The Page Program (PP) instruction allows bytes to
be programmed in the memory (changing bits from
1 to 0). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been ex-
ecuted. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write En-
able Latch (WEL).
The Page Program (PP) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, three address bytes and at least
one data byte on Serial Data Input (D). If the 8
least significant address bits (A7-A0) are not all
zero, all transmitted data that goes beyond the end
of the current page are programmed from the start
address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero).
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 16..
If more than 256 bytes are sent to the device, pre-
viously latched data are discarded and the last 256
data bytes are guaranteed to be programmed cor-
rectly within the same page. If less than 256 Data
bytes are sent to device, they are correctly pro-
grammed at the requested addresses without hav-
ing any effects on the other bytes of the same
page.
Chip Select (S) must be driven High after the
eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not
executed.
As soon as Chip Select (S) is driven High, the self-
timed Page Program cycle (whose duration is tPP)
is initiated. While the Page Program cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-
timed Page Program cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Page Program (PP) instruction applied to a page
which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 2. and Table 3.) is not execut-
ed.
Figure 16. Page Program (PP) Instruction Sequence
Note: Address bits A23 to A22 are Don’t Care.
C
D
AI04082B
S
42
41
43 44 45 46 47 48 49 50
52 53 54 55
40
C
D
S
23
2
1
3456789 10
28 29 30 31 32 33 34 35
22 21
3210
36 37 38
Instruction
24-Bit Address
0
765432
0
1
Data Byte 1
39
51
765432
0
1
Data Byte 2
765432
0
1
Data Byte 3
Data Byte 256
2079
2078
2077
2076
2075
2074
2073
765432
0
1
2072
MSB
相关PDF资料
PDF描述
M25P32VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6T 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMP3 4 Mbit Uniform Sector, Serial Flash Memory
相关代理商/技术参数
参数描述
M25P32VMN6P 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P32VMN6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P32VMN6TG 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P32VMN6TP 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P32VMP3 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface