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参数资料
| 型号： | M28C17-90WK1TR |
| 厂商： | 意法半导体 |
| 元件分类： | 保险丝 |
| 英文描述： | Fuses, 8A 250V T IEC GLASS 5X20 |
| 中文描述： | 16千位2K × 8并行EEPROM，带有软件数据保护 |
| 文件页数： | 10/17页 |
| 文件大小： | 131K |
| 代理商： | M28C17-90WK1TR |
M28C16B, M28C17B
10/17
Table 10A. Write Mode AC Characteristics for M28CxxB (5V range)
(T
A
= 0 to 70 °C or -40 to 85 °C; V
CC
= 4.5 to 5.5 V)
Symbol
Alt.
Parameter
Test Condition
M28C17B
Unit
Min
Max
t
AVWL
t
AS
Address Valid to Write Enable Low
E = V
IL
, G = V
IH
0
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
G = V
IH
, W = V
IL
0
ns
t
ELWL
t
CES
Chip Enable Low to Write Enable Low
G = V
IH
0
ns
t
GHWL
t
OES
Output Enable High to Write Enable Low
E = V
IL
0
ns
t
GHEL
t
OES
Output Enable High to Chip Enable Low
W = V
IL
0
ns
t
WLEL
t
WES
Write Enable Low to Chip Enable Low
G = V
IH
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
50
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
50
ns
t
WLDV
t
DV
Write Enable Low to Input Valid
E = V
IL
, G = V
IH
1
μs
t
ELDV
t
DV
Chip Enable Low to Input Valid
G = V
IH
, W = V
IL
1
μs
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
50
ns
t
WHEH
t
CEH
Write Enable High to Chip Enable High
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
ns
t
EHWH
t
WEH
Chip Enable High to Write Enable High
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
50
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
50
ns
t
WLQ5H
t
BLC
Time-out After the Last Byte Write
100
μs
t
Q5HQ5X
t
WC
Write Cycle Time
3
ms
t
DVWH
t
DS
Data Valid before Write Enable High
50
ns
t
DVEH
t
DS
Data Valid before Chip Enable High
50
ns
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相关代理商/技术参数 |
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| M28C17-90WK6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection |
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| M28C256 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
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