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参数资料
| 型号： | M28W160BT85GBT |
| 厂商： | 意法半导体 |
| 英文描述： | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（1兆x16插槽，引导块）3V电源快闪记忆体 |
| 文件页数： | 10/45页 |
| 文件大小： | 343K |
| 代理商： | M28W160BT85GBT |
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M28W160BT, M28W160BB
10/45
SIGNAL DESCRIPTIONS
See Figure 2 Logic Diagram and Table 1,Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A19).
The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15).
The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or data to be programmed during a Write Bus op-
eration.
Chip Enable (E).
The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
at V
IL
and Reset is at V
IH
the device is in active
mode. When Chip Enable is at V
IH
the memory is
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
Output Enable (G).
The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W).
The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable, E, or Write En-
able, W, whichever occurs first.
Write Protect (WP).
Write Protect is an input to
protect or unprotect the two lockable parameter
blocks. When Write Protect is at V
IL
, the lockable
blocks are protected and Program or Erase oper-
ations are not possible. When Write Protect is at
V
IH
, the lockable blocks are unprotected and can
be programmed or erased (refer to Table 4, Mem-
ory Blocks Protection Truth).
Reset (RP).
The Reset input provides a hard-
ware reset of the memory. When Reset is at V
IL
,
the memory is in reset mode: the outputs are high
impedance and the current consumption is mini-
mized. When Reset is at V
IH
, the device is in nor-
mal operation. Exiting reset mode the device
enters read array mode, but a negative transition
of Chip Enable or a change of the address is re-
quired to ensure valid data outputs.
V
DD
Supply Voltage.
V
DD
provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
V
DDQ
Supply Voltage.
V
DDQ
power supply to the I/O pins and enables all Out-
puts to be powered independently from V
DD
. V
DDQ
can be tied to V
DD
or can use a separate supply.
V
PP
Program Supply Voltage.
V
PP
is both a
control input and a power supply pin. The two
functions are selected by the voltage range ap-
plied to the pin. The Supply Voltage V
DD
and the
Program Supply Voltage V
PP
can be applied in
any order.
If V
PP
is kept in a low voltage range (0V to 3.6V)
V
PP
is seen as a control input. In this case a volt-
age lower than V
PPLK
gives an absolute protection
against program or erase, while V
PP
> V
PP1
en-
ables these functions (see Table 11, DC Charac-
teristics for the relevant values). V
PP
is only
sampled at the beginning of a program or erase; a
change in its value after the operation has started
does not have any effect and program or erase op-
erations continue.
If V
PP
is in the range 11.4V to 12.6V it acts as a
power supply pin. In this condition V
PP
must be
stable until the Program/Erase algorithm is com-
pleted (see Table 13 and 14).
V
SS
Ground.
V
SS
is the reference for all voltage
measurements.
Note: Each device in a system should have
V
DD,
V
DDQ
and V
PP
decoupled with a 0.1μF ca-
pacitor close to the pin. See Figure 8, AC Mea-
surement Load Circuit. The PCB trace widths
should be sufficient to carry the required V
PP
Program and Erase currents.
provides
the
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