参数资料
型号: M28W160BT85GBT
厂商: 意法半导体
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引导块)3V电源快闪记忆体
文件页数: 19/45页
文件大小: 343K
代理商: M28W160BT85GBT
19/45
M28W160BT, M28W160BB
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Conditions
summarized
in
Table
9,
Table 9. Operating and AC Measurement Conditions
Figure 7. AC Measurement I/O Waveform
Figure 8. AC Measurement Load Circuit
Table 10. Device Capacitance
Symbol
Note: Sampled only, not 100% tested.
M28W160BT, M28W160BB
Parameter
70
85
90
100
Units
Min
Max
Min
Max
Min
Max
Min
Max
V
DD
Supply Voltage
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
V
V
DDQ
Supply Voltage (V
DDQ
V
DD
)
2.7
3.6
2.7
3.6
2.7
3.6
1.65
3.6
V
Ambient Operating Temperature
–40
85
–40
85
–40
85
– 40
85
°C
Load Capacitance (C
L
)
50
50
50
50
pF
Input Rise and Fall Times
5
5
5
5
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref.
Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
AI00610
VDDQ
0V
VDDQ/2
AI00609C
VDDQ
CL
CL includes JIG capacitance
25k
DEVICE
UNDER
TEST
0.1μF
VDD
0.1μF
VDDQ
25k
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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