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参数资料
| 型号： | M28W160ECT90ZB6U |
| 厂商： | 意法半导体 |
| 英文描述： | 18-fold ESD transient voltage suppressor - C<sub>d</sub> max.: 120 pF; I<sub>RM</sub> max: 2A; Number of protected lines: 18 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 5.25 V |
| 中文描述： | 16兆位（1兆x16插槽，引导块）3V电源快闪记忆体 |
| 文件页数： | 5/50页 |
| 文件大小： | 860K |
| 代理商： | M28W160ECT90ZB6U |
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M28W160ECT, M28W160ECB
SUMMARY DESCRIPTION
The M28W160EC is a 16 Mbit (1 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at the block level and programmed in-system
on a Word-by-Word basis. These operations can
be performed using a single low voltage (2.7 to
3.6V) supply. V
DDQ
allows to drive the I/O pin
down to 1.65V. An optional 12V V
PP
power supply
is provided to speed up customer programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W160EC has an array of 39
blocks: 8 Parameter Blocks of 4 KWord and 31
Main Blocks of 32 KWord. M28W160ECT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W160ECB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in
Figure 5., Block Ad-
dresses
.
The M28W160EC features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When V
PP
≤
V
PPLK
all blocks are protected against
program or erase. All blocks are locked at power-
up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a 128 bit Protection Register
and a Security Block to increase the protection of
a system design. The Protection Register is divid-
ed into two 64 bit segments, the first one contains
a unique device number written by ST, while the
second one is one-time-programmable by the us-
er. The user programmable segment can be per-
manently
protected.
parameter block 0, can be permanently protected
by the user.
Figure 6.
, shows the Security Block
and Protection Register Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP48 (10 X 20mm)
and TFBGA46 (6.39 x 6.37mm, 0.75mm pitch)
packages. and is supplied with all the bits erased
(set to ’1’).
In addition to the standard version, the packages
are also available in Lead-free version, in compli-
ance with JEDEC Std J-STD-020B, the ST ECO-
PACK 7191395 Specification, and the RoHS
(Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free solder-
ing processes.
The
Security
Block,
相关PDF资料 |
PDF描述 |
|---|---|
| M28W160B-GBT | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160B-ZBT | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BT90ZB1T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BT90ZB6T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB70N1E | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28W160ESB70ZA6E | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays |
| M28W160FSB70ZA6E | 制造商:Micron Technology Inc 功能描述:1MX16 NOR FLASH PLASTIC PBF TB 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS TBGA |
| M28W160FST70ZA6E | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS TBGA |
| M28W320BT100ZB6T | 功能描述:闪存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W320CB100GB6 | 功能描述:闪存 32M (2Mx16) 100ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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