| 型号 | 厂商 | 描述 |
| m28w160ecb70zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V |
| m28w160ecb70zb6u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V |
| m28w160ecb85n1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V |
| m28w160ecb85n1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85n1s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85n6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85n6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85n6s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n1s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n6s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100zb1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100zb1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100zb1s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect100zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect85n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Rectifier diodes ultrafast, rugged |
| m28w160ect85zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect85zb1u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect85zb6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect85zb6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect90zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect90zb6u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 18-fold ESD transient voltage suppressor - C<sub>d</sub> max.: 120 pF; I<sub>RM</sub> max: 2A; Number of protected lines: 18 ; P<sub>PP</sub> max: 0 W; V<sub>BR</sub> typ.: 6.8 V; V<sub>RWM</sub>: 5.25 V |
| m28w160b-gbt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160b-zbt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160bt90zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160bt90zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n1s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n1u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb70n6s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85zb1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ecb85zb1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect85zb1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect85zb1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ect85zb1s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ct85zb1s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ct90n1s 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160ct90n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w160bb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |