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参数资料
| 型号： | M29F016D90M6F |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 2M X 8 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | 0.525 INCH, LEAD FREE, PLASTIC, SOP-44 |
| 文件页数： | 33/37页 |
| 文件大小： | 707K |
| 代理商： | M29F016D90M6F |
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Obsolete
Product(s)
- Obsolete
Product(s)
5/37
SUMMARY DESCRIPTION
The M29F016D is a 16 Mbit (2Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage 5V supply. On power-up
the memory defaults to its Read mode where it can
be read in the same way as a ROM or EPROM.
The memory is divided into 32 uniform blocks of
64Kbytes (see Figure 5, Block Addresses) that
can be erased independently so it is possible to
preserve valid data while old data is erased.
Blocks can be protected in groups of 4 to prevent
accidental Program or Erase commands from
modifying the memory. Program and Erase com-
mands are written to the Command Interface of
the memory. An on-chip Program/Erase Controller
simplifies the process of programming or erasing
the memory by taking care of all of the special op-
erations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions identi-
fied. The command set required to control the
memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP40 (10 x 20mm) and
SO44 packages. Access times of 55, 70 and 90ns
are available.
In order to meet environmental requirements, ST
offers the M29F016D in ECOPACK packages.
ECOPACK packages are Lead-free. The category
of second Level Interconnect is marked on the
package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum rat-
ings related to soldering conditions are also
marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK speci-
fications are available at: www.st.com.
The memory is supplied with all the bits erased
(set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI05269
21
A0-A20
W
DQ0-DQ7
VCC
M29F016D
E
VSS
8
G
RP
RB
A0-A20
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
相关PDF资料 |
PDF描述 |
|---|---|
| M29F016D70N1E | 2M X 8 FLASH 5V PROM, 70 ns, PDSO40 |
| M29F100B-150M3TR | 128K X 8 FLASH 5V PROM, 150 ns, PDSO44 |
| M29F200B-90XM3 | 256K X 8 FLASH 5V PROM, 90 ns, PDSO44 |
| M29F400BB55MT3 | 256K X 16 FLASH 5V PROM, 55 ns, PDSO44 |
| M29F400BB90MT3E | 256K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F016D90M6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D90N1 | 功能描述:闪存 16M (2Mx8) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F016D90N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D90N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F032D | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (4Mb x8, Uniform Block) 5V Supply Flash Memory |
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