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参数资料
| 型号： | M29F016D90M6F |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 2M X 8 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | 0.525 INCH, LEAD FREE, PLASTIC, SOP-44 |
| 文件页数： | 6/37页 |
| 文件大小： | 707K |
| 代理商： | M29F016D90M6F |
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Obsolete
Product(s)
- Obsolete
Product(s)
14/37
Alternative Toggle Bit (DQ2). The
Alternative
Toggle Bit can be used to monitor the Program/
Erase controller during Erase operations. The Al-
ternative Toggle Bit is output on DQ2 when the
Status Register is read.
During Chip Erase and Block Erase operations the
Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations from addresses
within the blocks being erased. A protected block
is treated the same as a block not being erased.
Once the operation completes the memory returns
to Read mode.
During Erase Suspend the Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive
Bus Read operations from addresses within the
blocks being erased. Bus Read operations to ad-
dresses within blocks not being erased will output
the memory cell data as if in Read mode.
After an Erase operation that causes the Error Bit
to be set the Alternative Toggle Bit can be used to
identify which block or blocks have caused the er-
ror. The Alternative Toggle Bit changes from ’0’ to
’1’ to ’0’, etc. with successive Bus Read Opera-
tions from addresses within blocks that have not
erased correctly. The Alternative Toggle Bit does
not change if the addressed block has erased cor-
rectly.
Table 5. Status Register Bits
Note: Unspecified data bits should be ignored.
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Program
Any Address
DQ7
Toggle
0
–
0
Program During Erase
Suspend
Any Address
DQ7
Toggle
0
–
0
Program Error
Any Address
DQ7
Toggle
1
–
0
Chip Erase
Any Address
0
Toggle
0
1
Toggle
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
Toggle
0
Non-Erasing Block
0
Toggle
0
No Toggle
0
Block Erase
Erasing Block
0
Toggle
0
1
Toggle
0
Non-Erasing Block
0
Toggle
0
1
No Toggle
0
Erase Suspend
Erasing Block
1
No Toggle
0
–
Toggle
1
Non-Erasing Block
Data read as normal
1
Erase Error
Good Block Address
0
Toggle
1
No Toggle
0
Faulty Block Address
0
Toggle
1
Toggle
0
相关PDF资料 |
PDF描述 |
|---|---|
| M29F016D70N1E | 2M X 8 FLASH 5V PROM, 70 ns, PDSO40 |
| M29F100B-150M3TR | 128K X 8 FLASH 5V PROM, 150 ns, PDSO44 |
| M29F200B-90XM3 | 256K X 8 FLASH 5V PROM, 90 ns, PDSO44 |
| M29F400BB55MT3 | 256K X 16 FLASH 5V PROM, 55 ns, PDSO44 |
| M29F400BB90MT3E | 256K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F016D90M6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D90N1 | 功能描述:闪存 16M (2Mx8) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F016D90N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D90N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F032D | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit (4Mb x8, Uniform Block) 5V Supply Flash Memory |
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