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参数资料
| 型号： | M29F400BT45M1E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 256K X 16 FLASH 5V PROM, 45 ns, PDSO44 |
| 封装： | 0.525 INCH, LEAD FREE, PLASTIC, SOP-44 |
| 文件页数： | 5/40页 |
| 文件大小： | 371K |
| 代理商： | M29F400BT45M1E |
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M29F400BT, M29F400BB
Bus operations
3
Bus operations
There are five standard bus operations that control the device. These are Bus Read, Bus
Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write
Enable are ignored by the memory and do not affect bus operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write
AC Waveforms, and Table 12., Read AC Characteristics, for details of when the output
becomes valid.
3.2
Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,
during the whole Bus Write operation. See Figure 9. and Figure 10., Write AC Waveforms,
3.3
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.
3.4
Standby
When Chip Enable is High, VIH, the Data Inputs/Outputs pins are placed in the high-
impedance state and the Supply Current is reduced to the Standby level.
When Chip Enable is at VIH the Supply Current is reduced to the TTL Standby Supply
Current, ICC2. To further reduce the Supply Current to the CMOS Standby Supply Current,
11., DC Characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, ICC4, for Program or Erase operations until the operation completes.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F400BT45N1 | 功能描述:闪存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F400BT55M1 | 功能描述:闪存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F400BT55N1 | 功能描述:闪存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F400BT55N6E | 功能描述:闪存 4 Mbit Sngl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29F400BT70M1 | 功能描述:闪存 512Kx8 or 256Kx16 70 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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