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参数资料
| 型号： | M29W200BT120N6E |
| 厂商： | 意法半导体 |
| 英文描述： | 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory |
| 中文描述： | 2兆位（256Kb的x8或128KB的x16插槽，引导块）低电压单电源闪存 |
| 文件页数： | 7/22页 |
| 文件大小： | 175K |
| 代理商： | M29W200BT120N6E |
7/22
M29W200BT, M29W200BB
Table 7. Commands, 16-bit mode, BYTE = V
IH
Table 8. Commands, 8-bit mode, BYTE = V
IL
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A16, DQ8-DQ14 and DQ15 are Don’t Care.
DQ15A–1 is A–1 when BYTE is V
IL
or DQ15 when BYTE is V
IH
.
Read/Reset.
After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select.
After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase.
After these commands read the Status Register until the Program/Erase
Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional Bus Write
Operations until Timeout Bit is set.
Unlock Bypass.
After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset.
After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend.
After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands
on non-erasing blocks as normal.
Erase Resume.
After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Block Erase
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
AAA
AA
555
55
X
F0
Auto Select
3
AAA
AA
555
55
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend
1
X
B0
Erase Resume
1
X
30
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| M29W200BT55N1 | 功能描述:闪存 256Kx8 or 128Kx16 55 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W200BT70M1 | 功能描述:闪存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M29W200BT70N1 | 功能描述:闪存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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| M29W200BT90N6 | 功能描述:闪存 256Kx8 or 128Kx16 90 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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