参数资料
型号: M30626FJPFPU7C
元件分类: 微控制器/微处理器
英文描述: 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PQFP100
封装: 14 X 20 MM, 0.65 MM PITCH, ROHS COMPLIANT, PLASTIC, QFP-100
文件页数: 4/104页
文件大小: 1313K
代理商: M30626FJPFPU7C
C - 3
REVISION HISTORY
40
57
70
72
73
74
76
79
Table 5.24 is partly revised.
Table 5.43 is partly revised.
Table 5.48 is partly revised.
Table 5.50 is partly revised.
Table 5.53 is partly revised.
Table 5.55 is revised.
Table 5.57 is partly revised.
Table 5.69 is partly revised.
2.41
Jan 01, 2006
-
voltage down detection reset -> brown-out detection Reset
2-4
Tables 1.1 to 1.3 Performance outline of M16C/62P group are partly
revised.
7
Table 1.4 Product List (1) is partly revised.
Note 1 is added.
8
Table 1.5 Product List (2) is partly revised.
Note 1, 2 and 3 are added.
9
Table 1.6 Product List (3) is partly revised.
Note 1 and 2 are added.
10
Table 1.7 Product List (4) is partly revised.
Note 1 and 2 are added.
11
Figure 1.3 Type No., Memory Size, Shows RAM capacity, and Package is
partly revised
12
Table 1.8 Product Code of Flash Memory version and ROMless version for
M16C/62P is partly revised.
13
Table 1.9 Product Code of Flash Memory version for M16C/62P is partly
revised.
14
Figure 1.6 Pin Configuration (Top View) is partly revised.
15-17 Tables 1.10 to 1.12 Pin Characteristics for 128-Pin Package are added.
18-19 Figure 1.7 and 1.8 Pin Configuration (Top View) are partly revised.
20-21 Tables 1.13 to 1.14 Pin Characteristics for 100-Pin Package are added.
22
Figure 1.9 Pin Configuration (Top View) is partly revised.
23-24 Tables 1.15 to 1.16 Pin Characteristics for 80-Pin Package are added.
25-29 Tables 1.17 to 1.21 are partly revised.
34
Note 4 of Table 4.1 SFR Information is partly revised.
43
Table 5.4 A/D Conversion Characteristics is partly revised.
45
Table 5.6 Flash Memory Version Electrical Characteristics for 100 cycle
products is partly revised.
Table 5.7 Flash Memory Version Electrical Characteristics for 10,000 cycle
products is partly revised.
Table 5.8 Flash Memory Version Program / Erase Voltage and Read
Operation Voltage Characteristics is partly revised.
46
Table 5.9 Low Voltage Detection Circuit Electrical Characteristics is partly
revised.
Rev.
Date
Description
Page
Summary
相关PDF资料
PDF描述
MC9S12XEQ512CAAR 32-BIT, FLASH, 50 MHz, RISC MICROCONTROLLER, PQFP80
MC9S08RC8PE 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDIP28
MC9S08RE60FDE 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, QCC48
MC9S08RG32CFDE 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, QCC48
MPC8280CVVMHBX 32-BIT, 266 MHz, RISC PROCESSOR, PBGA480
相关代理商/技术参数
参数描述
M30626FJPGP 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
M30626FJPGP#D3C 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit M16C CISC 512KB Flash 3.3V/5V 100-Pin LQFP 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 512KB FLASH 3.3V/5V 100LQFP - Trays
M30626FJPGP#D5C 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 512KB FLASH 3.3V/5V 100LQFP - Trays
M30626FJPGP#U3C 功能描述:IC M16C MCU FLASH 512K 100LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:M16C™ M16C/60/62P 标准包装:96 系列:PIC® 16F 核心处理器:PIC 芯体尺寸:8-位 速度:20MHz 连通性:I²C,SPI 外围设备:欠压检测/复位,POR,PWM,WDT 输入/输出数:11 程序存储器容量:3.5KB(2K x 14) 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:128 x 8 电压 - 电源 (Vcc/Vdd):2.3 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:14-TSSOP(0.173",4.40mm 宽) 包装:管件
M30626FJPGP#U5C 功能描述:IC M16C MCU FLASH 512K 100LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:M16C™ M16C/60/62P 标准包装:1 系列:AVR® ATmega 核心处理器:AVR 芯体尺寸:8-位 速度:16MHz 连通性:I²C,SPI,UART/USART 外围设备:欠压检测/复位,POR,PWM,WDT 输入/输出数:32 程序存储器容量:32KB(16K x 16) 程序存储器类型:闪存 EEPROM 大小:1K x 8 RAM 容量:2K x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:44-TQFP 包装:剪切带 (CT) 其它名称:ATMEGA324P-B15AZCT