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参数资料
| 型号： | M30626FJPFPU7C |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 20 MM, 0.65 MM PITCH, ROHS COMPLIANT, PLASTIC, QFP-100 |
| 文件页数： | 47/104页 |
| 文件大小： | 1313K |
| 代理商： | M30626FJPFPU7C |
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5. Electrical Characteristics
Rev.2.41
Jan 10, 2006
Page 45 of 96
REJ03B0001-0241
NOTES:
1.
Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60
°C (D3, D5, U3, U5) unless otherwise specified.
2.
n denotes the number of block erases.
3.
Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
4.
Maximum number of E/W cycles for which operation is guaranteed.
5.
Topr = -40 to 85
°C (D3, D7, U3, U7) / -20 to 85 °C (D5, D9, U5, U9).
6.
Referenced to VCC1 = 4.5 to 5.5V, 3.0 to 3.6V at Topr = -40 to 85
°C (D7, U7) / -20 to 85 °C (D9, U9) unless otherwise specified.
7.
Table 5.7 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.6.
8.
To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to
unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For
example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the
total number of times erasure is used.
9.
Should erase error occur during block erase, attempt to execute clear status register command, then block erase command
at least three times until erase error disappears.
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (D7, D9, U7 and U9).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Table 5.6
Flash Memory Version Electrical Characteristics (1) for 100 cycle products (D3, D5, U3,
U5)
Symbol
Parameter
Standard
Unit
Min.
Typ.
Max.
Program and Erase Endurance (3)
100
cycle
Word Program Time (VCC1=5.0V
)
25
200
s
Lock Bit Program Time
25
200
s
Block Erase Time
(VCC1=5.0V
)
4-Kbyte block
0.3
4
s
8-Kbyte block
0.3
4
s
32-Kbyte block
0.5
4
s
64-Kbyte block
0.8
4
s
Erase All Unlocked Blocks Time (2)
4×n
s
tPS
Flash Memory Circuit Stabilization Wait Time
15
s
Data Hold Time (5)
10
year
Table 5.7
Flash Memory Version Electrical Characteristics (6) for 10,000 cycle products (D7, D9,
U7, U9) (Block A and Block 1 (7))
Symbol
Parameter
Standard
Unit
Min.
Typ.
Max.
Program and Erase Endurance (3, 8, 9)
10,000 (4)
cycle
Word Program Time (VCC1=5.0V
)
25
s
Lock Bit Program Time
25
s
Block Erase Time
(VCC1=5.0V
)
4-Kbyte block
0.3
s
tPS
Flash Memory Circuit Stabilization Wait Time
15
s
Data Hold Time (5)
10
year
Table 5.8
Flash Memory Version Program / Erase Voltage and Read Operation Voltage
Characteristics (at Topr = 0 to 60
°C(D3, D5, U3, U5), Topr = -40 to 85 °C(D7, U7) / Topr =
-20 to 85
°C(D9, U9))
Flash Program, Erase Voltage
Flash Read Operation Voltage
VCC1 = 3.3 V ± 0.3 V or 5.0 V ± 0.5 V
VCC1=2.7 to 5.5 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M30626FJPGP | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
| M30626FJPGP#D3C | 制造商:Renesas Electronics Corporation 功能描述:MCU 16-bit M16C CISC 512KB Flash 3.3V/5V 100-Pin LQFP 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 512KB FLASH 3.3V/5V 100LQFP - Trays |
| M30626FJPGP#D5C | 制造商:Renesas Electronics Corporation 功能描述:MCU 16BIT R8C CISC 512KB FLASH 3.3V/5V 100LQFP - Trays |
| M30626FJPGP#U3C | 功能描述:IC M16C MCU FLASH 512K 100LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/62P 标准包装:96 系列:PIC® 16F 核心处理器:PIC 芯体尺寸:8-位 速度:20MHz 连通性:I²C，SPI 外围设备:欠压检测/复位，POR，PWM，WDT 输入/输出数:11 程序存储器容量:3.5KB（2K x 14） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:128 x 8 电压 - 电源 (Vcc/Vdd):2.3 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 包装:管件 |
| M30626FJPGP#U5C | 功能描述:IC M16C MCU FLASH 512K 100LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/62P 标准包装:1 系列:AVR® ATmega 核心处理器:AVR 芯体尺寸:8-位 速度:16MHz 连通性:I²C，SPI，UART/USART 外围设备:欠压检测/复位，POR，PWM，WDT 输入/输出数:32 程序存储器容量:32KB（16K x 16） 程序存储器类型:闪存 EEPROM 大小:1K x 8 RAM 容量:2K x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:44-TQFP 包装:剪切带 (CT) 其它名称:ATMEGA324P-B15AZCT |
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