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参数资料
| 型号： | M34519E8FP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 4-BIT, OTPROM, 6 MHz, MICROCONTROLLER, PDSO42 |
| 封装： | 0.450 INCH, 0.80 MM PITCH, PLASTIC, SSOP-42 |
| 文件页数： | 32/50页 |
| 文件大小： | 1808K |
| 代理商： | M34519E8FP |
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38
9571B–AT42–08/10
AT42QT1111-MU/AT42QT1111-AU
8.
Specifications
8.1
Absolute Maximum Specifications
8.2
Recommended Operating Conditions
8.3
DC Specifications
8.4
Timing Specifications
Vdd
-0.5 to +6V
Max continuous pin current, any control or drive pin
±10 mA
Voltage forced onto any pin
-1.0V to (Vdd + 0.5) Volts
EEPROM setups maximum writes
100,000 write cycles
CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or other conditions beyond those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum specification conditions for
extended periods may affect device reliability
Operating temperature
-40°C to +85°C
Storage temperature
-65°C to +150°C
Vdd
1.8V to 5.5V
Supply ripple + noise
±20 mV
Cx transverse load capacitance per key
2 to 20 pF
Vdd = 5.0V, Cs = 4.7 nF, Rs = 1 M
, Ta = recommended range, unless otherwise noted
Parameter
Description
Min
Typ
Max
Units
Notes
Iddr
Average supply current, running
–
12 at 5V
8 at 3V
mA
For typical values see
Vil
Low input logic level
-0.5V
–
0.3 Vdd
V
Vih
High input logic level
0.6 Vdd
Vdd
Vdd + 0.5V
V
Vol
Low output voltage
0
–
0.7
V
10 mA sink current
Voh
High output voltage
0.8 Vdd
–
Vdd
V
10 mA source current
Iil
Input leakage current
–
<0.05
1
A
Rrst
Internal RST pull-up resistor
30
–
60
k
Parameter
Description
Min
Typ
Max
Units
Notes
TBS
Burst duration
–
6
–
ms
4.7 nF Cs/parallel acquisition
Fc
Burst center frequency
–
40
–
kHz
Fm
Burst modulation, percentage
–
18
–
%
TPW
Pulse width
–
9000
–
ns
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